2017
DOI: 10.1134/s003602361701003x
|View full text |Cite
|
Sign up to set email alerts
|

Hall effect, electrical and magnetic resistance in Cd3As2 + MnAs (30%) composite at high pressures

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

0
1
0
3

Year Published

2018
2018
2023
2023

Publication Types

Select...
6

Relationship

1
5

Authors

Journals

citations
Cited by 9 publications
(4 citation statements)
references
References 19 publications
0
1
0
3
Order By: Relevance
“…Composites with high magnetoresistance values, in which semiconducting compounds of cadmium arsenide were used as a matrix and compounds of MnAs were used as ferromagnetic nanoclusters, were synthesized in [1]. As was shown in [2][3][4][5][6], the electrical and magnetic properties of the (Cd -x Mn 1 -x ) 3 As 2 nanocomposite are determined by MnAs nanoclusters. The pressure dependences of the electrical resistivity, the Hall coefficient, the carrier mobility, the carrier concentration, and the magnetoresistance in the range of 3-4 GPa exhibit features associated with phase transitions.…”
Section: Introductionmentioning
confidence: 99%
“…Composites with high magnetoresistance values, in which semiconducting compounds of cadmium arsenide were used as a matrix and compounds of MnAs were used as ferromagnetic nanoclusters, were synthesized in [1]. As was shown in [2][3][4][5][6], the electrical and magnetic properties of the (Cd -x Mn 1 -x ) 3 As 2 nanocomposite are determined by MnAs nanoclusters. The pressure dependences of the electrical resistivity, the Hall coefficient, the carrier mobility, the carrier concentration, and the magnetoresistance in the range of 3-4 GPa exhibit features associated with phase transitions.…”
Section: Introductionmentioning
confidence: 99%
“…На этих зависимостях было обнаружено отрицательное магнетосопротивление (ОМС), максимум которого достигает ~1% в интервале давлений ≈1-2.6 ГПа. Кроме ОМС, в сплаве установлены особенности поведения положительного магнетосопротивления в области давлений, соответствующих фазовым переходам в полупроводниковой матрице композита Cd 3 As 2 и в ферромагнитных гранулах MnAs [19,21].…”
Section: Introductionunclassified
“…Величина пика на барической зависимости приведенного магнетосопротивления растет с увеличением напряженности магнитного поля. В композитах с другим содержанием MnAs также в окрестности 4 ГПа наблюдали особенности в поведении электрических характеристик [14,19,21]. Механизм возникновения ОМС в гранулированных структурах представлен в работах [24][25][26].…”
Section: Introductionunclassified
“…Настоящая работа является продолжением исследований удельного электросопротивления, коэффициента Холла и магнетосопротивления в Cd 3 As 2 + MnAs (MnAs -44.7%) до 9 GPa, опубликованных ранее в работах [18,19].…”
Section: Introductionunclassified