2013
DOI: 10.1088/1367-2630/15/1/013008
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Hall-effect characterization of the metamagnetic transition in FeRh

Abstract: The antiferromagnetic ground state and the metamagnetic transition to the ferromagnetic state of CsCl-ordered FeRh epilayers have been characterized using Hall and magnetoresistance measurements. On cooling into the ground state, the metamagnetic transition is found to coincide with a suppression in carrier density of at least an order of magnitude below the typical metallic level that is shown by the ferromagnetic state. The carrier density in the antiferromagnetic state is limited by intrinsic doping from Fe… Show more

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Cited by 69 publications
(75 citation statements)
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References 48 publications
(103 reference statements)
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“…literature 33,34 . The different intrinsic resistivities of the AFM and FM phases, namely Dr AFM À FM , are not apparent in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…literature 33,34 . The different intrinsic resistivities of the AFM and FM phases, namely Dr AFM À FM , are not apparent in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The simplest measurement is of the resistivity ρ of the film, since ρ in the FM phase is much less than in the AF phase 35,36,20 . The temperature dependence of ρ for the same 25 nm FeRh epilayer for which X-ray data were shown is plotted in Figure 5, measured using a standard fourpoint probe method: spring-loaded, gold-plated pins were pressed on to the sample surface to make contact to the sample, which was mounted on a heater stage in a small custom vacuum chamber to prevent any sample oxidation when hot.…”
Section: Representative Resultsmentioning
confidence: 99%
“…The pressure should remain better than 1 x 10 -6 Torr throughout. The effects of varying this anneal temperature can be found in de Vries et al 20 9. Shut off heater power and cool the samples to room temperature.…”
Section: Epilayer Depositionmentioning
confidence: 99%
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“…This phase transition is accompanied by a large change in longitudinal and Hall resistivity [2]- [4], lattice constant [5] and entropy [6], [7]. The transition temperature is tunable around room temperature by a control of chemical composition [8], [9], so FeRh alloys are candidate materials for several applications such as heat-assisted magnetic recording [10], [11], AFM memories [12], [13], and memristor devices [14].…”
Section: Introductionmentioning
confidence: 99%