1982
DOI: 10.1016/0038-1098(82)90004-7
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Hall effect and transverse magnetoresistance in a low-dimensional conductor HfTe5

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Cited by 44 publications
(22 citation statements)
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“…Early Hall measurements concurred with the thermopower measurements as to the sign of the dominant carriers in the PHYSICAL REVIEW B 15 SEPTEMBER 1999-I VOLUME 60, NUMBER 11 PRB 60 0163-1829/99/60͑11͒/7816͑4͒/$15.00 7816 ©1999 The American Physical Society system, with very similar temperature dependence. 13 These measurements indicated a hole mobility of Ϸ2900 cm 2 /V s and a carrier concentration of 1.5ϫ10 18 cm Ϫ3 for HfTe 5 at 210 K. In this paper we report a large enhancement of the resistive peak with applied magnetic field, up to 9 Tesla, with a change in normalized resistivity, ͑9T͒/͑0͒, being approximately a factor of 3 in ZrTe 5 and a factor of 10 in HfTe 5 . These effects are anomalously large given that there is no magnetic character to this resistive transition.…”
Section: Introductionmentioning
confidence: 52%
See 1 more Smart Citation
“…Early Hall measurements concurred with the thermopower measurements as to the sign of the dominant carriers in the PHYSICAL REVIEW B 15 SEPTEMBER 1999-I VOLUME 60, NUMBER 11 PRB 60 0163-1829/99/60͑11͒/7816͑4͒/$15.00 7816 ©1999 The American Physical Society system, with very similar temperature dependence. 13 These measurements indicated a hole mobility of Ϸ2900 cm 2 /V s and a carrier concentration of 1.5ϫ10 18 cm Ϫ3 for HfTe 5 at 210 K. In this paper we report a large enhancement of the resistive peak with applied magnetic field, up to 9 Tesla, with a change in normalized resistivity, ͑9T͒/͑0͒, being approximately a factor of 3 in ZrTe 5 and a factor of 10 in HfTe 5 . These effects are anomalously large given that there is no magnetic character to this resistive transition.…”
Section: Introductionmentioning
confidence: 52%
“…This is very analogous to our previous studies of Ti doping in the HfTe 5 material. 13 This was an attempt to insert a smaller atom into the structure and create chemical pressure. These results could then be related to the results from the previous stress and pressure measurements.…”
Section: Resultsmentioning
confidence: 99%
“…4, we reproduce the temperature dependence of the HfTe 5 Hall coefficient. The filled circles are data points from Izumi et al 7 The solid line is a fit to a phenomenological polaron theory, Eq. ͑6͒, below.…”
Section: Hall Effectmentioning
confidence: 99%
“…Zhou et al reported the suppression of resistivity anomaly on application of pressure and emergence of superconductivity with the TC ~ 4 K at 14 GPa pressure 11 . The latest report by H. Xiong et al 13 has suggested 3D nature of band structure and estimated the gap of [18][19][20][21][22][23][24][25][26][27][28][29] meV between valence and conduction band by photoemission study 13 . It is suggested that the electronic transport anomaly in ZrTe5 is mediated by Lifshitz transition in the Dirac band, and strongly depends on the carrier concentration 12 .…”
Section: Introductionmentioning
confidence: 99%