Journal of Applied Physics
 2003
DOI: 10.1063/1.1622994
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Hall effect and ionized impurity scattering in Si(1−x)Gex

Paul Kinsler
1
,
W.Th. Wenckebach
2

Abstract: Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si (1−x) Ge x is vital in order to predict the correct Hall parameters. Our results show good agreement with the experimental data of Joelsson et.al. [2].

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