Hall Effect and Conductivity of Cuprous Oxide

Angello, Stephen J.

doi:10.1103/physrev.62.371

Cited by 17 publications

(2 citation statements)

References 4 publications

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“…Those samples a chemical polishing technique using a solution with highest mobility come reasonably close to a~~r O x i m a t e l~ l o % H2°2, l o % theoretical predictions; but a large mass of mea-HNO,, and 80% H 2 0 . Electron microscope surements by many authors (Engelhard 1933; investigation showed precipitates embedded in Angello 1942;Nieke 953 ;Schmidt 1954; the Cu,O matrix which varied greatly in size and 03Keeffe a [. 1963) are whose results density.…”

Section: Introductionmentioning

confidence: 99%

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Hole mobility in Cu₂O. II. Scattering by defects

Kužel¹,

Cann²,

Sheinin³

et al. 1970

Can. J. Phys.

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The mobility of holes in CuzO was measured and for certain types of samples found to be very much lower than could have been expected from scattering by lattice phonons. It is proposed that large (10-lo cnlz o r greater) space charge limited centers are responsible since these will give the right temperature dependence of the mobility and are compatible with barrier layers around the crystalline copper precipitates present in all samples of CuzO studied under the electron microscope. The decrease in mobility after heat treatment is explained as resulting from an increased thickness of the depletion layer and resultant increase in size of the scattering center.

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Section: Introductionmentioning

confidence: 99%

“…The polycrystalline samples were prepared by the method of Blankenburg and Kassel (1952) and subsequently annealed at lower oxygen pressure.…”

Section: Introductionmentioning

confidence: 99%

Hole mobility in Cu₂O. II. Scattering by defects

Kužel¹,

Cann²,

Sheinin³

et al. 1970

Can. J. Phys.

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Über die Halbleitereigenschaften des Kupferoxyduls. IX. Halleffektsmessungen bei tiefen Temperaturen

Schmidt

1954

Annalen der Physik

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Mit 19 Abbildungen InhaltsiibersichtEs werden Leitfhhigkeits-und Halleffektsmessungen am Cu,O unterhalb der Zimmertemperatur beschrieben, wobei besonders der EinfluB der Art der Abkiihlung der Proben nach der bei 960" C und verschiedenen Sauerstoffpartialdrucken erfolgten Temperung untersucht wird.In der Temperaturabhangigkeit der Hallkonstante R und des Produktes x -R festgestellte Anomalien werden auf das gleichzeitige Auftreten vonLadungstragern verschiedenen Vorzeichens (Defekt-und UberschuSelektronen) zuriickgefiihrt .Aus Untersuchungen der Oberflachenleitfahigkeit des Cu,O wird geschlossen, daR der Ursprung des anomalen Leitungsmechanismus in einer diinnen Oberflachenschicht liegt.

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