2018
DOI: 10.1002/slct.201801272
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Halide‐Modulated Functionality of Wide Band Gap Zinc Oxide Semiconductor Nanoparticle

Abstract: Surface modification of inorganic nanomaterials using different ions is well-known to induce significant modulation in functionality of the nanoparticles (NP), which improves tuning their relevant properties for suitable applications in the field of nanotechnology. Here, we report synthesis and surface modification of a model inorganic wide bandgap semiconductor ZnO NP by halide ions by simple precipitation method and demonstrate that proximity of various halide ions to the NP modifies their electronic propert… Show more

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Cited by 5 publications
(2 citation statements)
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References 53 publications
(37 reference statements)
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“…The DOS (density of states) analysis was continued to gain further insight into the observed effect. We calculated the TDOS (total density of states) of ZnO NPs, The gap between the VB (valence band) and CB (conduction band) of $0.8 eV was obtained, which is in accordance with the literature data, 50,51 as shown in Fig. 5.…”
Section: Computational Studysupporting
confidence: 83%
“…The DOS (density of states) analysis was continued to gain further insight into the observed effect. We calculated the TDOS (total density of states) of ZnO NPs, The gap between the VB (valence band) and CB (conduction band) of $0.8 eV was obtained, which is in accordance with the literature data, 50,51 as shown in Fig. 5.…”
Section: Computational Studysupporting
confidence: 83%
“…39 The detailed calculation methodology is depicted in our previous work. 40,41 All control and assembled systems were placed in a rectangular box with the dimensions 30 Â 16 Â 14 A 3 , with a sufficient vacuum so as to avoid inuence from periodic replication. Owing to a large volume of the simulation cell for these cluster systems, single kpoint (G point) calculations were performed for these systems with ionic optimization under a conjugate gradient algorithm until the Hellmann-Feynman force on each ion was less than 0.01 eVÅ À1 van der Waals corrections were included in this simulation process using the Grimme DFT-D2 formalism.…”
Section: Computational Detailsmentioning
confidence: 99%