Half-metallicity, magnetic moments, and gap states in oxygen-deficient magnetite for spintronic applications

Abstract

Influence of oxygen vacancies on the electronic structure and magnetic properties of NiFe 2 O 4 thin films

Magnetic and electric properties of Ru-substituted CoFe2O4 thin films fabricated by pulsed laser deposition

“…On the other hand, the spin-up and spin-down states of the Ru ions contribute equally to the DOS at the Fermi level, which results in a lower spin polarization than that of Fe 3 O 4 in which the carriers are fully spin-polarized as predicted in previous theoretical studies. 1,13 Figure 2 shows the XRD spectrum of a CRFO film (x ¼ 0.5) formed on the a-Al 2 O 3 (001) substrate. The film was found to be highly oriented along the [111] direction without crystalline impurities.…”

Influence of the cation distribution, atomic substitution, and atomic vacancies on the physical properties of CoFe2O4 and Ni<

“…We studied the oxygendeficient ferrites (Fe) Td [MFe] Oh O 4−ζ and the metal-deficient compounds (Fe) Td [M 1−γ Fe] Oh O 4 , (Fe) Td [MFe 1−δ ] Oh O 4 and (Fe 1− ) Td (MFe) Oh O 4 . Some of these defects have already been studied in spinel ferrites such as Fe 3 O 4 [26,27] or NiFe 2 O 4 [97].…”

“…On the one hand, the (+II, +III) cation distribution inside the occupied octahedral site sublattice (for the perfectly inverse structure) or between occupied tetrahedral and octahedral sites (for the partially inverted structure) is crucial, as it may affect electronic, magnetic, and optical properties [23]. On the other hand, deviations from the perfect MFe 2 O 4 stoichiometry also modify the physical properties of the spinel ferrites: One of the main effects expected from atom vacancies will be to induce a charge reorganization, with local modifications of the valence charge states and the possible creation of defect gap states, which will change the magnetization and the electronic, ionic, or tunnel conductivities [18,[24][25][26][27][28].…”

Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating

“…Recent reports show that oxygen vacancies in Fe 3 O 4 thin films can increase spin-orbit coupling, [25] introducing a gapped state and spin-flipping. [26,27] As a result, it is highly expected that the electrochemical processes discussed above can also change spin-related properties in magnetite and significantly influence magnetotransport. Since the state of the gated device can only be partially recovered due to the electrochemical effects, to study the magnetotransport, we prepared an identical device (Device E) that shows a similar temperature dependence with T v ≈ 100 K and started from the pristine state (the inset of Figure 3a, similar as results observed in all devices).…”