We study the proximity effect between a conventional semiconductor and a disordered s-wave superconductor. We calculate the effective momentum relaxation rate in the semiconductor due to processes involving electron tunneling into a disordered superconductor and scattering off impurities. The magnitude of the effective disorder scattering rate is important for understanding the stability of the topological superconducting state that emerges in the semiconductor, since disorder scattering has a detrimental effect and can drive the system into a nontopological state. We find that the effective impurity scattering rate involves higher-order tunneling processes and is suppressed due to the destructive quantum interference of quasi-particle and quasi-hole trajectories. We show that, despite the fact that both the proximity-induced gap and the effective impurity scattering rate depend on interface transparency, there is a large parameter regime where the topological superconducting phase is robust against disorder in the superconductor. Thus, we establish that the static disorder in the superconductor does not suppress the proximity induced topological superconductivity in the semiconductor.PACS numbers: 03.67. Lx, 71.10.Pm, 74.45.+c Introduction. The possibility of engineering Hamiltonians that exploit the properties of the interface between two different materials has recently attracted a lot of attention. There are many proposals that exploit magnetic, superconducting and other properties for spintronics and quantum information purposes 1-4 . In particular, the prospect of realizing exotic topological superconducting states carrying Majorana fermions at the interface between a semiconductor and a conventional swave superconductor in sandwich structures 5-12 is very intriguing. The basic concept underlying these proposals is that electrons tunneling between different materials inherit their physical properties. For example, electrons virtually propagating in the superconductor "feel" superconducting correlations. This is the basic idea underlying the superconducting proximity effect which is used for realizing the topological p + ip superconducting state at the interface. In most of the previous studies 5-12 , the s-wave superconductor has been considered in the clean limit, and the effect of the superconductor disorder on the induced state was not addressed. However, it is well-known that impurity scattering in the active system (i.e. in the semiconductor) is detrimental for topological superconductivity [13][14][15][16][17][18] . While semiconductors can be grown very clean, most ordinary s-wave superconductors (e.g. Al or Nb) are disordered and have a short mean free path l. This motivates us to revisit the basics of the superconducting proximity effect and take into account the effects of disorder in the superconductor. As pointed out in Ref. 18, superconducting disorder might act similar to impurities in the semiconductor, see Fig.1b. Thus, the effect of superconducting disorder on the stability of the topol...