“…Importantly, spin–orbit interaction, a key parameter in forefront areas of physics, can be tuned by a vertical electric field applied through InAs and InSb nanosheets with the dual-gate architecture. , One of the prerequisite conditions to study the diverse physics in semiconductor-superconductor hybrid systems is the induced superconductivity in the semiconductors by the proximity effect. Recently, proximity induced superconductivity has been realized in InSb nanosheet Josephson junctions. ,− Free-standing InAs nanosheets, on the other hand, appear as contestant materials with the similar intriguing properties as InSb nanosheets. ,, More importantly, Al, as a widely used superconductor, could be epitaxially grown onto InAs nanostructures , with a relatively stable superconductor-semiconductor interface, while epitaxial growth of Al on InSb nanostructures with high quality, stable interface is still challenging. , Considering the advantages of InAs-based superconductor-semiconductor hybrids, proximity induced superconductivity in free-standing InAs nanosheets deserves to be demonstrated, which has not been reported yet.…”