Abstract:To achieve optimal thermoelectric performance, it is crucial to manipulate the scattering processes within materials to decouple the transport of phonons and electrons. In half-Heusler (hH) compounds, selective defect reduction can significantly improve performance due to the weak electron-acoustic phonon interaction. This study utilized Sb-pressure controlled annealing process to modulate the microstructure and point defects of Nb0.55Ta0.40Ti0.05FeSb compound, resulting in a 100% increase in carrier mobility … Show more
“…In GeTe materials, heavy alloying, such as AgBiSe 2 -alloying, AgBiTe 2 -alloying, and Pb/Bi/Se-alloying, is used to realize the p–n transition, which induces the multidimensional defects and strengthens both carrier and phonon scattering. , The strong carrier-phonon scattering contributes to low μ / κ l (<410.7 cm 3 V –1 s –1 W –1 K) and ZT < 0.6. − It should be noted that the carrier MFP (0.1–10 nm) and the phonon MFP (0.1–1000 nm) of GeTe do not overlap exactly, , which reveals the possibility of increasing μ / κ l by decoupling carrier-phonon scattering to realize high ZT .…”
The coupled relationship between carrier and phonon scattering severely limits the thermoelectric performance of n-type GeTe materials. Here, we provide an efficient strategy to enlarge grains and induce vacancy clusters for decoupling carrierphonon scattering through the annealing optimization of n-type GeTe-based materials. Specifically, boundary migration is used to enlarge grains by optimizing the annealing time, while vacancy clusters are induced through the aggregation of Ge vacancies during annealing. Such enlarged grains can weaken carrier scattering, while vacancy clusters can strengthen phonon scattering, leading to decoupled carrier-phonon scattering. As a result, a ratio between carrier mobility and lattice thermal conductivity of ∼492.8 cm 3 V −1 s −1 W −1 K and a peak ZT of ∼0.4 at 473 K are achieved in Ge 0.67 Pb 0.13 Bi 0.2 Te. This work reveals the critical roles of enlarged grains and induced vacancy clusters in decoupling carrier-phonon scattering and demonstrates the viability of fabricating high-performance n-type GeTe materials via annealing optimization.
“…In GeTe materials, heavy alloying, such as AgBiSe 2 -alloying, AgBiTe 2 -alloying, and Pb/Bi/Se-alloying, is used to realize the p–n transition, which induces the multidimensional defects and strengthens both carrier and phonon scattering. , The strong carrier-phonon scattering contributes to low μ / κ l (<410.7 cm 3 V –1 s –1 W –1 K) and ZT < 0.6. − It should be noted that the carrier MFP (0.1–10 nm) and the phonon MFP (0.1–1000 nm) of GeTe do not overlap exactly, , which reveals the possibility of increasing μ / κ l by decoupling carrier-phonon scattering to realize high ZT .…”
The coupled relationship between carrier and phonon scattering severely limits the thermoelectric performance of n-type GeTe materials. Here, we provide an efficient strategy to enlarge grains and induce vacancy clusters for decoupling carrierphonon scattering through the annealing optimization of n-type GeTe-based materials. Specifically, boundary migration is used to enlarge grains by optimizing the annealing time, while vacancy clusters are induced through the aggregation of Ge vacancies during annealing. Such enlarged grains can weaken carrier scattering, while vacancy clusters can strengthen phonon scattering, leading to decoupled carrier-phonon scattering. As a result, a ratio between carrier mobility and lattice thermal conductivity of ∼492.8 cm 3 V −1 s −1 W −1 K and a peak ZT of ∼0.4 at 473 K are achieved in Ge 0.67 Pb 0.13 Bi 0.2 Te. This work reveals the critical roles of enlarged grains and induced vacancy clusters in decoupling carrier-phonon scattering and demonstrates the viability of fabricating high-performance n-type GeTe materials via annealing optimization.
“…15,16 Zhu et al have revealed that TE devices, made from HH alloys, are potential materials for TE cooling with high power density. 17 TE materials are used in aerospace for power generation or thermal management in space missions and unmanned aerial vehicles (UAVs) in the absence of traditional power sources. 18–20 HH alloy-based materials viz.…”
TiCoSb1+x(x=0.0, 0.01, 0.02, 0.03, 0.04, 0.06) samples have been synthesized, employing solid state reaction method followed by arc melting. Theoretical calculations, using Density Functional Theory (DFT) have been performed to...
“…Thermoelectric materials have become one of the hot issues in material science that can be applied to reduce waste heat [1]. Several theoretical approaches have been conducted to find suitable candidates for thermoelectric materials, such as Heusley alloy [2,3], metal dichalcogenides [4,5], and many others. Two different quantities can be investigated to predict the quality of thermoelectric materials, namely, the Seebeck and Nernst coefficients.…”
The LDA+U approach has been employed to examine the effect of the Seebeck coefficient and thermal electric conductivity in single-layer NiI2. The combination of self-consistent calculation and semi-classical Boltzmann transport has been performed to the role of magnetism in the critical temperature and room temperature. Significant tendencies were observed for some Coulomb repulsion values for different temperatures. This indicates that magnetism has a noteworthy influence on the Seebeck coefficient and thermal electric conductivity.
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