H-induced surface restructuring on Si(100): Formation of higher hydrides

Cheng, Chih‐Chia; Yates, John T.

doi:10.1103/physrevb.43.4041

Cited by 179 publications

(90 citation statements)

References 19 publications

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“…Figure 3A shows the two desorption states of hydrogen originating from PH 3 . Figure 3B shows the hydrogen desorption from pure atomic hydrogen adsorption on Si( 100)-(2x A); major desorption processes at 740 K and 640 K are observed as well as a 9 broad low-intensity hydrogen evolution process centered at about 360 K, in agreement with other H./Si experiments [ 18,24]. A comparison of Figure 3A with Figure 3B shows that the desorption kinetics differ for hydrogen from PH 3 adsorption compared to hydrogen from a fully hydrogen-covered surface.…”

Section: Phosphine Desorption Kineticssupporting

confidence: 86%

Unique hydride chemistry on silicon–PH3 interaction with Si(100)-(2×1)

Colaianni

Chen

Yates

1994

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The dissociative adsorption of phosphine (PH3) on Si(100)-(2×1) and its high temperature thermal behavior have been studied by high-resolution electron energy loss spectroscopy (HREELS), Auger electron spectroscopy, and by temperature programmed desorption (TPD). Phosphine adsorbs dissociatively onto Si(100)-(2×1) at 100 K as PH2 and H species, as revealed by vibrational bands at 1050 cm−1 [δsc(PH2)] and 2100 cm−1 [ν(Si–H)]. The PH2(a) undergoes thermal decomposition to adsorbed P and H near 650 K, as determined by HREELS. TPD measurements reveal two PH3 desorption processes at 485 and 635 K. The 635 K desorption is shown to result from PH2+H recombination, while the mechanism for the 485 K desorption cannot be definitely identified. Additionally, two H2 desorption states were observed at 685 and 770 K.

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Section: Phosphine Desorption Kineticssupporting

confidence: 86%

Unique hydride chemistry on silicon–PH3 interaction with Si(100)-(2×1)

Colaianni

Chen

Yates

1994

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The molecular C1 2 would give a Cl-Cl stretching mode near 546 cm-I [26] which could be vibrationally excited at least by the impact scattering mechanism [27]; (2) [29]. Our LEED studies indicate the presence of a (lx2) and (2xl) pattern for the whole range of Cl coverage.…”

Section: Surface Species Present At 100kmentioning

confidence: 73%

Chlorine bonding sites and bonding configurations on Si(100)–(2×1)

Gao

Cheng

Chen

et al. 1993

The Journal of Chemical Physics

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114

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A combination of experimental methods has been employed for the study of Cl2 adsorption and reaction on Si(100)–(2×1). At 100 K, Cl2 adsorption occurs rapidly to a coverage of ∼0.7 Cl/Si. This is followed by slower adsorption kinetics with further Cl2 exposure. Two Cl adsorption states are observed experimentally. One of the adsorption states is terminally bonded Cl on the inclined dangling bond of the symmetric Si2 dimer sites, with a vibrational frequency, ν(SiCl) of 550∼600 cm−1. These bonded Cl atoms give four off-normal Cl+ ESDIAD emission beams from the orthogonal domains of silicon dimer sites. The Si–Cl bond angle for this adsorption configuration is estimated to be inclined 25°±4° off-normal. The second Cl adsorption state, a minority species, is bridge bonded Cl with ν(Si2Cl) of ∼295 cm−1 which produces Cl+ ion emission along the surface normal direction. Both adsorption states are present at low temperatures. Irreversible conversion from bridge bonded Cl to terminally bonded Cl begins to occur near 300 K; the conversion is complete near ∼673 K. LEED studies indicate that the (2×1) reconstruction for the substrate is preserved for all Cl coverages. The most probable Cl+ kinetic energy in electron stimulated desorption, ESD, is 1.1−+0.30.6 eV. A significant adsorbate-adsorbate quenching effect reducing the Cl+ ion yield in ESD occurs above a Cl(a) coverage of ∼0.5 ML (monolayer) due to interadsorbate interactions. The maximum Cl+ yield is about 4×10−7 Cl+/e at an electron energy of 120 eV. Temperature programmed desorption results show that SiCl2 is the major etching product which desorbs at about 840 K.

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“…The morphology and reconstruction after passivation strongly depends on the H chemical potential [26]. By selecting adequate surface temperature and exposure conditions, a (1 · 1), (3 · 1), or (2 · 1) surface is prepared [20,[27][28][29][30]. In the case of low temperature exposures, Si is etched primarily by the evolution of SiH 4 from SiH x¼2;3 hydrides [29].…”

Section: Introductionmentioning

confidence: 99%