Gwyddion: an open-source software for SPM data analysis

Nečas, David; Klapetek, Petr

doi:10.2478/s11534-011-0096-2

Cited by 2,995 publications

(2,604 citation statements)

References 15 publications

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“…Silicon cantilevers with a spring constant of 40 N m −1 and a resonance frequency of 300 kHz were used in tapping mode; data were further processed using Gwyddion. [35] VTIV Measurements: VTIV measurements were carried out on 95 nm thick films evaporated on a quartz substrate prepatterned with interdigitated gold electrodes. The spacing between electrodes was 80 µm.…”

Section: Experimental Methodsmentioning

confidence: 99%

Investigation of the High Electron Affinity Molecular Dopant F6‐TCNNQ for Hole‐Transport Materials

Zhang

Kahn

2017

Adv Funct Materials

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2,2′-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6-TCNNQ) is investigated as a molecular p-type dopant in two hole-transport materials, 2,2′,7,7′-tetrakis(N,N-diphenylamino)-9,9-spirobifluorene (Spiro-TAD) and tris(4-carbazoyl-9-ylphenyl)amine (TCTA). The electron affinity of F6-TCNNQ is determined to be 5.60 eV, one of the strongest organic molecular oxidizing agents used to date in organic electronics. p-Doping is found to be effective in Spiro-TAD (ionization energy = 5.46 eV) but not in TCTA (ionization energy = 5.85 eV). Optical absorption measurements demonstrate that charge transfer is the predominant doping mechanism in Spiro-TAD:F6-TCNNQ. The hostdopant interaction also leads to a significant alteration of the host film morphology. Finally, transport measurements done on Spiro-TAD:F6-TCNNQ as a function of dopant concentration and temperature, and using a highly doped contact layer to ensure negligible hole injection barrier, lead to an accurate measurement of the film conductivity and hole-hopping activation energy.

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Section: Experimental Methodsmentioning

confidence: 99%

Investigation of the High Electron Affinity Molecular Dopant F6‐TCNNQ for Hole‐Transport Materials

Zhang

Kahn

2017

Adv Funct Materials

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“…As described elsewhere for ferrite evaluation [20], the optimum settings for imaging were determined to be a lift height of 50 nm, drive amplitude-based noise reduction, a step size of 170 nm and a scan rate of 0.54 Hz. The AFM/MFM data were analysed with the Gwyddion 2.30 [29] open source scanning probe microscopy analysis software (http://gwyd dion.net/; Czech Metrology Institute, Brno, Czech Republic). Data processing used the procedure detailed previously [20], and ferrite quantification used a combined manual and automated thresholding procedure.…”

Section: Methodsmentioning

confidence: 99%

Quantification of sigma-phase evolution in thermally aged 2205 duplex stainless steel

et al. 2015

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In this study, the evolution of sigma-phase development in a 2205 duplex steel was studied following thermal ageing in the temperature range 750-850°C for periods up to 100 h. A suite of materials analysis techniques including combined electron backscatter diffraction-energy-dispersive X-ray imaging and magnetic force microscopy are used to quantify the change in volume fraction of the phases. The experimental results for each ageing condition are compared with the results from other ageing experiments and the predictions from the computer modelling. They show good correlation for the amount of sigma phase formed under a range of ageing conditions (and thus varying quantities of sigma phase). EBSD measurements showed no preferential orientation relationships relative to the parent ferrite for the nucleation of sigma phase, implying that the minimisation of boundary misorientation energy is not significant in determining sigma-phase nucleation sites. The results are discussed with respect to the experimentally measured properties of sigma phase and the kinetics of the precipitation process.

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“…Secondary electron mode was applied with 20 kV accelerating voltage. Additionally, the SEM-based grain size at diamond surface was analysed via graphical profiling tool of the computer software for data visualization and analysis (Gwyddion, 2.40, Czech Republic) [44].…”

Section: Semmentioning

confidence: 99%

Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

et al. 2016

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Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro-and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm -1 . Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for borondoped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

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Gwyddion: an open-source software for SPM data analysis

Cited by 2,995 publications

References 15 publications

Investigation of the High Electron Affinity Molecular Dopant F6‐TCNNQ for Hole‐Transport Materials

Investigation of the High Electron Affinity Molecular Dopant F6‐TCNNQ for Hole‐Transport Materials

Quantification of sigma-phase evolution in thermally aged 2205 duplex stainless steel

Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

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