Gunn domain existence in the channel of a saturated GaAs MESFET

Bonjour, P.; Castagné, R.; Courat, J.-P.

doi:10.1051/rphysap:019780013012065100

Cited by 1 publication

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References 6 publications

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“…It must be taken into consideration when interpreting carrier concentration profiles accross the channel. On the other hand, two dimensional numerical computations show that the existence of an interfacial depleted zone strongly influences the behavior of the trapped Gunn domain in the FET channel and thereby the saturation characteristics of the transistor [7].…”

Section: Fig 6 -Numencally Computed Relation Between the Net Posi-mentioning

confidence: 99%

Implications of the interface effects in the normally-off type GaAs MESFETs

Bert¹,

Nuzillat²

1978

Rev. Phys. Appl. (Paris)

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2014 On compare, pour les types normally-on et normally-off, l'évolution des caractéristiques I-V de MESFET-GaAs de structure plane à canal long sous l'effet d'une polarisation du substrat. On montre que l'interprétation des résultats nécessite de tenir compte, en plus de la zone de charge d'espace Schottky, d'une zone déserte à l'interface canal-substrat ainsi qu'à la surface de l'espace source-grille. Cette dernière, qui n'a qu'une influence mineure pour le type normally-on, dégrade fortement le courant du FET normally-off et limite les tensions de seuil positives réalisables. D'autre part, le confinement des porteurs entre deux charges d'espace conduit à une description théorique simple du canal hors neutralité, ce qui permet un contrôle précis de la tension de seuil, même pour les couches très minces. Abstract. 2014 The variations of I-V characteristics under substrate bias are compared for normallyon and normally-off type planar GaAs-MESFETs with long-channel. The experimental results are interpreted by superimposing to the Schottky gate space-charge region both a depleted layer at the channel-substrate interface and a depleted surface region between source and gate. This last one is only of minor influence on normally-on characteristics, but strongly reduces the normally-off current and limits the achievable positive threshold voltages. On the other hand, the carrier confinement between two space-charge layers leads to a simple theoretical model for the no-neutral channel, allowing an accurate threshold voltage control even for very thin layers.

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Section: Fig 6 -Numencally Computed Relation Between the Net Posi-mentioning

confidence: 99%