Controlling magnetism with electric fields is a key challenge to develop future energy-efficient devices, however, the switching between inversion symmetric states, e.g. magnetization up and down as used in current technology, is not straightforward, since the electric field does not break time-reversal symmetry. Here, we demonstrate that local electric fields can be used to reversibly switch between a magnetic skyrmion and the ferromagnetic state. These two states are topologically inequivalent, and we find that the direction of an electric field directly determines the final state. This observation establishes the possibility to combine energy-efficient electric field writing with the recently envisaged skyrmion racetrack-type memories.Current magnetic information technology is mainly based on writing processes requiring either local magnetic fields or spin torques, which are both generated by currents and thus inherently imply large switching power. It has been demonstrated that magnetic properties at surfaces or interfaces can be altered upon the application of large electric fields (1-5). This has mostly been ascribed to changes in magnetocrystalline anisotropy due to spin-dependent surface screening and modifications of the band structure (6-8), changes in atom positions (5,9,10), or differences in hybridization with an adjacent oxide layer (4,11). Since the electric field does not break time-reversal symmetry, several workarounds have been proposed to toggle between bistable magnetic states with electric fields (12,13). Even a change of material composition due to electric fields has been presented as an alternative to switch between states with different magnetic properties (14).This fundamental hurdle might be circumvented altogether by using magnetic skyrmions as information carriers instead of conventional bistable states. Magnetic skyrmions represent knots in the spin texture and thus are topologically distinct from the trivial ferromagnetic state (15,16). They can form in magnetic systems with broken inversion symmetry due to the Dzyaloshinskii-Moriya interaction (DMI), which is a consequence of spin-orbit coupling and favors an orthogonal spin configuration with a material-specific rotational sense. For a utilization of skyrmions in future spintronic devices it is indispensable to be able to reliably write and delete them individually. A local switching between the skyrmion and the ferromagnetic state has been demonstrated experimentally with vertically injected spin-polarized currents from a scanning tunneling microscope (STM) tip (17). However, non-collinear magnetic states are highly susceptible to electric currents, which may lead to a movement of magnetic skyrmions above a surprisingly low current threshold (15,18,19). While this is a benefit on one hand, as information can be transported easily through the material (20,21), in a write unit it is desirable to encode the information in a specific position, without a subsequent movement of the written magnetic bit.In this work we show that an el...