“…Several memristive devices are proven to be compatible with the CMOS fabrication process [137], [140]. While T iO 2−x memristors were quite popular, there are other growing list of memristors based on materials such as Hf O x , T aO x , M oO x , La 1x Sr x M nO 3 , InGaZnO [141], organic memristors with electrografted redox thin film [142], ferroelectric tunnel memristors (FTM), Ge 2 Sb 2 T e 5 (GST) memristors [132], SiO x [143], SiN x [141] and P r 0.7 Ca 0.3 M nO 3 (PCMO) [63]. As the memristor technology is only at early stages of development, the properties, stability issues, switching behavior and compatibility with CMOS devices of various memristive elements and selection of most stable material stack is an open problem.…”