Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Chen, Yuanpeng; Liang, Hongwei; Xia, Xiaochuan; Zhang, Heqiu; Shi, Jianjun; Abbas, Qasim; Du, Guotong

doi:10.1007/s10854-017-7294-7

Cited by 21 publications

(24 citation statements)

References 35 publications

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“…Although mechanically exfoliated mono- or few- layer h-BN from bulk h-BN crystal synthesized under high pressure and high temperature 4 exhibits excellent crystalline quality, there are significant difficulties in scalability and controllability over thickness and size, limiting its applications with practical 2D materials-based devices 18 . On the other hands, chemical vapor deposition (CVD) methods offer a promising opportunity in the growth of a large-area h-BN film with a high crystallinity 19–23 . However, multiple wafer-scale production of h-BN films, compatible with current micro-electronic technologies, remains significantly restricted due to limited quartz tube diameter and heating zone in conventional CVD systems.…”

Section: Introductionmentioning

confidence: 99%

Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing

Lee

Jeong

Okello

et al. 2019

Sci Rep

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Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050 °C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600 °C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards two-dimensional electronics and optoelectronics.

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Section: Introductionmentioning

confidence: 99%

Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing

Lee

Jeong

Okello

et al. 2019

Sci Rep

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“…CVD can be carried out on metals (Cu [30], Ni [31], Co [32], etc.) as well as on metal oxides (Al 2 O 3 ) [33] or graphite [34]. The precursors can also be in different forms.…”

Section: Synthesis Methods Of Few-layered H-bn (Fbn)mentioning

confidence: 99%

Few-Layered Hexagonal Boron Nitride: Functionalization, Nanocomposites, and Physicochemical and Biological Properties

Jędrzejczak-Silicka¹,

Trukawka²,

Piotrowska³

et al. 2020

Biochemical Toxicology - Heavy Metals and Nanomaterials

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Hexagonal boron nitride (h-BN) is an analogue of graphite called "white graphene." In the structure of h-BN, B and N atoms substitute C atoms. The boron and nitrogen atoms are linked via strong B-N covalent bonds and form interlocking hexagonal rings. h-BN is used in different areas due to its interesting physical and chemical properties, e.g., in electronics as an insulator and in ceramics, resins, plastics, and paints. Therefore, boron nitride (BN) is also a popular inorganic compound in cosmetic industry (the highest BN concentration up to 25% can be found in eye shadow formulation). It is also widely used in dental cement production (for dental and orthodontic applications). Boron nitride seems to be suitable for biomedical applications; therefore, the cytotoxicity in vitro and in vivo observations of h-BN nanoplates and novel few-layered h-BN-based nanocomposites are still needed. The short-time studies confirm their low cytotoxicity and suggest that BN can be used as a novel drug delivery system; however, medical application needs additional verification in long-term studies.

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“…The large-scale growth of hBN thin films is technologically important in order to translate 2D electronics from the laboratory into a commercially viable state [13,14]. There are several techniques that can be used to grow hBN thin films with chemical vapor deposition (CVD) being the most promising technique for obtaining large-area films of hBN [15][16][17][18][19][20][21]. In addition to its large-area growth, CVD can be used with both traditional insulating and semiconducting substrates, as well as metal substrates such as Cu, Ni, etc.…”

Section: Introductionmentioning

confidence: 99%

Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD

et al. 2019

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In this paper we demonstrate a metal organic chemical vapor deposition (MOCVD) process for growth of few layer hBN films on Ni(111) on sapphire substrates using triethylborane (TEB) and ammonia (NH3). Ni(111) was selected as a substrate due to its symmetry and close lattice matching to hBN. Using atomic force microscopy (AFM) we find hBN is well aligned to the Ni below with in plane alignment between the hBN zig zag edge and the <110> of Ni. We further investigate the growth process exploring interaction between precursors and the Ni(111) substrate. Under TEB pre-exposure Ni-B and graphitic compounds form which disrupts the formation of layered phase pure hBN; while NH3 pre-exposure results in high quality films. Tunnel transport of films was investigated by conductive-probe AFM demonstrating films to be highly resistive. These findings improve our understanding of the chemistry and mechanisms involved in hBN growth on metal surfaces by MOCVD.

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Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Cited by 21 publications

References 35 publications

Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing

Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing

Few-Layered Hexagonal Boron Nitride: Functionalization, Nanocomposites, and Physicochemical and Biological Properties

Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD

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