Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates

Chauvin, Nicolas; Alouane, Mohamed Helmi Hadj; Anufriev, Roman; Khmissi, H.; Naji, K.; Patriarche, G.; Bru‐Chevallier, C.; Gendry, M.

doi:10.1063/1.3674985

Cited by 23 publications

(26 citation statements)

References 21 publications

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“…This step is followed by decreasing the sample temperature to 380°C corresponding to the optimal growth temperature to obtain pure WZ InP NWs, with an In flux corresponding to an InP 2D layer growth rate equal to 1 µm/h and a V/III BEP ratio = 20. 50 Prior to the NW growth, the P2 flux is opened for 10 sec to form InP pedestals with an Au droplet on it. 19 Then, the In shutter is opened to start the InP NW growth.…”

Section: Methodsmentioning

confidence: 99%

InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

et al. 2019

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Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter tailored to support a single mode waveguide. Such a NW geometry is obtained by a controlled balance over axial and radial growths during the gold-catalyzed growth of the NWs by molecular beam epitaxy. This allows us to investigate the impact of the taper angle on the emission properties of a single InAs/InP QD-NW. At room temperature, a Gaussian farfield emission profile in the telecom O-band with a beam divergence angle θ = 30° is demonstrated from a single InAs QD embedded in a 2° tapered InP NW. Moreover, single photon emission is observed at cryogenic temperature for an off-resonant excitation and the best result, g 2 (0) = 0.05, is obtained for a 7° tapered NW. This all-encompassing study paves the way for the monolithic integration on silicon of an efficient single photon source in the telecom band based on InAs/InP QD-NWs.Epitaxy, Gaussian far-field emission profile, Telecom band, Silicon integration Non-classical light sources emitting at optical communication wavelength bands are of prime importance to quantum communication applications. One of these sources is the single photon source (SPS) which is the building block for realizing scalable on-chip devices for quantum 3 information processing. Once the single photons are generated, it is then required to manipulate the photons either to encode the information or to make the measurements. This means that the SPS must be integrated with compact photonic devices that can combine many optical components. Thanks to its large refractive index, silicon (Si) facilitates the fitting of a high number of optical components into a small device size making it a powerful platform for photonic integrated circuits. 1 Moreover, Si appears to be the most compatible material, due to the maturity of the complementary-metal-oxide-semiconductor (CMOS) fabrication methods, to combine electronics with photonics. 2 However, Si is an indirect band gap material which makes it a very poor light source. This issue can be solved by the monolithic integration, bonding or pick-andplace procedure of III-V materials on Si to fabricate CMOS compatible SPS. [3][4][5][6] In addition to the substrate choice, SPS emitting in the 1.3 µm and 1.5 µm telecom windows are required to reduce the losses for fiber-based long-haul communications. In particular, InAs quantum dots (QDs) have proven to be good candidates as efficient non classical light sources in these bands. 7,8 This requires embedding the QD in a nanophotonic structure such as nanowires (NWs), 9 micropillars, 10 optical horns, 11 photonic crystal cavities 12,13 and waveguides 14 in order to guide and efficiently extract the light in free space...

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Section: Methodsmentioning

confidence: 99%

InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

et al. 2019

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“…This especially holds for nanowires (NWs) based on III–V semiconducting compounds . A unique aspect of III–V nanowires is the possibility to grow them in hexagonal wurtzite ( wz ) structure with space group P6 3 mc (

{normalC}_{6 v}^{4}

) despite the fact that the corresponding bulk materials crystallize in the cubic zinc‐blende ( zb ) geometry with space group

F \overset{4}{true} 3 m

(

{normalT}_{d}^{2}

) with the exception of group‐III nitrides …”

Section: Introductionmentioning

confidence: 99%

Forbidden Band‐Edge Excitons of Wurtzite‐GaP: A Theoretical View

Belabbes

Bechstedt

2018

Physica Status Solidi (b)

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By means of an approximate quasiparticle description we study the electronic structure of wurtzite-GaP in more detail for the two lowest Γ 8c and Γ 7c conduction bands and the three highest Γ 9v , Γ 7þv , and Γ 7Àv valence bands. We conclude that the corresponding three gaps between the valence bands and the Γ 8c conduction band are quasi-direct, while the ones involving the s-like Γ 7c conduction band are direct. The optical oscillator strengths are also calculated outside the Γ point. Their influence on the observability of excitons in absorption and emission spectra is investigated. The almost dipoleforbidden transitions into the lowest p-like Γ 8c conduction band become substantial for finite wave vectors perpendicular to the c-axis. Therefore, the finite extent of the exciton envelope functions gives rise to non-vanishing transition strengths, which explain the intense photoluminescence observed experimentally by forbidden p-type excitons.

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“…InP nanostructure is known as a promising candidate for extensive applications in optoelectronic devices due to its small direct band gap (1.38 eV) , high electron mobility and large exciton Bohr radii (∼20 nm) . Up to date, InP nanowires have been synthesized by various methods, such as metal organic vapor phase epitaxy , laser catalytic growth , molecular beam epitaxy , and metalorganic chemical vapor deposition (MOCVD) . However, very few papers in the literature were reported on the growth of single‐crystalline InP nanowires by CVD route, which is much simpler and economical in comparison to the other methods.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and optical properties of InP quantum dot/nanowire heterostructures

Ren

Wang

et al. 2013

Phys. Status Solidi A

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Nanoscale heterostructures with modulated composition and/or passivated interfaces can enrich/enhance the performance of diverse compact devices. Here, we report the synthesis of nanoscale pearl‐like InP nanowire heterostructures wrapped with InP quantum dots (QDs)‐decorated PxOy nanospheres periodically along the length by a chemical vapor deposition (CVD) method. Compared with the Raman modes of bulk InP, additional surface phonon (SP) peak, which results from InP QDs finite size, is observed in these pearl‐like heterostructures. Room‐temperature photoluminescence (PL) showed that these pearl‐like heterostructures simultaneously exhibited two broad emission bands at 768 and 846 nm, which belong to the PL emission of InP QDs and InP trunks, respectively. The significant blue shift of the two emission bands compared with the intrinsic luminescence of InP crystal at 920 nm is attributed to the quantum confinement effects. A self‐organization model is proposed to illustrate the formation of the heterostructures. These interesting pearl‐like InP/PxOy heterostructures may find potential applications in constructing new nanoscale optoelectronic devices.

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Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates

Cited by 23 publications

References 21 publications

InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

Forbidden Band‐Edge Excitons of Wurtzite‐GaP: A Theoretical View

Synthesis and optical properties of InP quantum dot/nanowire heterostructures

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