Growth study of Co thin film on nanorippled Si(100) substrate

Sarathlal, K V; Kumar, Dileep; Gupta, Ajay

doi:10.1063/1.3567731

Cited by 37 publications

(7 citation statements)

References 14 publications

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“…6 On the fundamental viewpoint, the control of magnetic anisotropy in low dimensional system has emerged as an important topic in the nanomagnetism research. Single polycrystalline films of permalloy, iron, or cobalt deposited on patterned surfaces exhibit substantial modifications of their magnetic properties, [7][8][9][10][11] most noticeably the appearance of uniaxial magnetic anisotropy (UMA). Such induced anisotropy has also been used to control the interlayer exchange coupling in Fe/Cr/Fe trilayers 8 or exchange biased multilayers.…”

Section: Introductionmentioning

confidence: 99%

On the limits of uniaxial magnetic anisotropy tuning by a ripple surface pattern

Arranz

Colino

Palomares

2014

Journal of Applied Physics

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Ion beam patterning of a nanoscale ripple surface has emerged as a versatile method of imprinting uniaxial magnetic anisotropy (UMA) on a desired in-plane direction in magnetic films. In the case of ripple patterned thick films, dipolar interactions around the top and/or bottom interfaces are generally assumed to drive this effect following Schlömann's calculations for demagnetizing fields of an ideally sinusoidal surface [E. Schlömann, J. Appl. Phys. 41, 1617 (1970)]. We have explored the validity of his predictions and the limits of ion beam sputtering to induce UMA in a ferromagnetic system where other relevant sources of magnetic anisotropy are neglected: ripple films not displaying any evidence of volume uniaxial anisotropy and where magnetocrystalline contributions average out in a fine grain polycrystal structure. To this purpose, the surface of 100 nm cobalt films grown on flat substrates has been irradiated at fixed ion energy, fixed ion fluency but different ion densities to make the ripple pattern at the top surface with wavelength Λ and selected, large amplitudes (ω) up to 20 nm so that stray dipolar fields are enhanced, while the residual film thickness t = 35–50 nm is sufficiently large to preserve the continuous morphology in most cases. The film-substrate interface has been studied with X-ray photoemission spectroscopy depth profiles and is found that there is a graded silicon-rich cobalt silicide, presumably formed during the film growth. This graded interface is of uncertain small thickness but the range of compositions clearly makes it a magnetically dead layer. On the other hand, the ripple surface rules both the magnetic coercivity and the uniaxial anisotropy as these are found to correlate with the pattern dimensions. Remarkably, the saturation fields in the hard axis of uniaxial continuous films are measured up to values as high as 0.80 kG and obey a linear dependence on the parameter ω2/Λ/t in quantitative agreement with Schlömann's prediction for a surface anisotropy entirely ruled by dipolar interaction. The limits of UMA tuning by a ripple pattern are discussed in terms of the surface local angle with respect to the mean surface and of the onset of ripple detachment.

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Section: Introductionmentioning

confidence: 99%

On the limits of uniaxial magnetic anisotropy tuning by a ripple surface pattern

Arranz

Colino

Palomares

2014

Journal of Applied Physics

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“…The ripple pattern formation is well understood in terms of a balance between two competitive counteracting processes induced by curvaturedependent preferential IBE that tries to roughen the surface and thermally activated smoothening mechanism like surface diffusion or viscous flow of material [27,28]. The film deposited on rippled substrates exhibits strong magnetic anisotropy [29,30,31], which is driven by morphological anisotropy. Direct nanoscale ripple patterning can also induce in-plane UMA in epitaxial [32] and polycrystalline [5,6] thin films.…”

Section: Introductionmentioning

confidence: 99%

“…As the topographic condition strongly influences thin film's growth, oblique incidence defocused broad ion beam surface patterning potentially offers an easy and inexpensive solution to prepattern the surface, which can be used as a template for the overgrowth structures [35][36][37]. Several discrete studies on morphology and magnetic anisotropy of the two distinguished systems, i.e., obliquely grown film on bare substrate and film deposited on the rippled patterned substrate, have been investigated thoroughly for different systems [2,5,6,24,30,32]. Few works on coupled oblique-ripple systems have been done in the recent past, emphasizing morphology or optical property [35,[38][39][40].…”

Section: Introductionmentioning

confidence: 99%

Morphology induced large magnetic anisotropy in obliquely grown nanostructured thin film on nanopatterned substrate

Bera

Dev

Kuila

et al. 2022

Applied Surface Science

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“…Recently, ion-bombardmentinduced surface corrugations have been shown to offer the potential to use them as substrates for deposition of nanofunctional thin films. [6][7][8] To generate patterns, a target is exposed to a beam of energetic ions (typical energies in the range of hundreds of eV (Refs. 1 and 9) to tens of keV (Refs.…”

Section: Introductionmentioning

confidence: 99%

Anomalous behavior in temporal evolution of ripple wavelength under medium energy Ar+-ion bombardment on Si: A case of initial wavelength selection

Garg

Cuerno

Kanjilal

et al. 2016

Journal of Applied Physics

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We have studied the early stage dynamics of ripple patterns on Si surfaces, in the fluence range of 1-3 Â 10 18 ions cm À2 , as induced by medium energy Ar þ -ion irradiation at room temperature. Under our experimental conditions, the ripple evolution is found to be in the linear regime, while a clear decreasing trend in the ripple wavelength is observed up to a certain time (fluence). Numerical simulations of a continuum model of ion-sputtered surfaces suggest that this anomalous behavior is due to the relaxation of the surface features of the experimental pristine surface during the initial stage of pattern formation. The observation of this hitherto unobserved behavior of the ripple wavelength seems to have been enabled by the use of medium energy ions, where the ripple wavelengths are found to be order(s) of magnitude larger than those at lower ion energies.

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Growth study of Co thin film on nanorippled Si(100) substrate

Abstract: Articles you may be interested inLarge magneto-elastic anisotropy enhancement with temperature in composition-graded FeCoTa thin films

Cited by 37 publications

References 14 publications

On the limits of uniaxial magnetic anisotropy tuning by a ripple surface pattern

On the limits of uniaxial magnetic anisotropy tuning by a ripple surface pattern

Morphology induced large magnetic anisotropy in obliquely grown nanostructured thin film on nanopatterned substrate

Anomalous behavior in temporal evolution of ripple wavelength under medium energy Ar+-ion bombardment on Si: A case of initial wavelength selection

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