Growth, selectivity and adhesion of CVD-deposited copper from Cu+1 (hexafluoroacetylacetonate trimethylvinylsilane) and dichlorodimethylsilane

Webb, J. B.; Northcott, D. J.; Emesh, I.

doi:10.1016/0040-6090(95)06706-x

Cited by 17 publications

(8 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…17 The resistivity of the copper film in this study was 1.8 ⍀-cm as compared to the reported data of ϳ1.9 ⍀-cm for sputtered copper, 14 ϳ1.67 ⍀-cm for bulk Cu, 16 and Ͼ2 ⍀-cm for chemical vapor deposition (CVD) 18 and metalorganic chemical vapor deposition (MOCVD) 14 Cu films. The low resistivity and low TCR of the film guarantee small electric resistance over a wide range of temperature and low temperature rise due to joule heating.…”

Section: Resultsmentioning

confidence: 93%

Curing of polyimide and the effect of the TEOS SiO2 barrier layer on the electromigration of sputtered Cu with polyimide passivation

Hung

Chiou

2002

Journal of Elec Materi

View full text Add to dashboard Cite

The curing process of polyimide and the electromigration of copper films with polyimide (PI) passivation are studied. Thermal analysis of polyimide suggests that imidization completes at ϳ200°C with an endothermic reaction associated with the breaking of the C-OH and N-H bonds as revealed by Fourier transformation infrared spectroscopy (FTIR). Although there is 89.8% weight loss when PI is heated from 20°C to 200°C, outgassing of PI passivation is still observed at higher temperatures. Carbon, nitrogen, and oxygen atoms diffuse into Cu during thermal processing of PI/Cu films. The tetraethyl orthosilicate (TEOS) SiO 2 films are used as the barrier layer between PI and Cu to retard the poisoning of Cu. The effect of TEOS SiO 2 film on electromigration of Cu is investigated.

show abstract

Section: Resultsmentioning

confidence: 93%

Curing of polyimide and the effect of the TEOS SiO2 barrier layer on the electromigration of sputtered Cu with polyimide passivation

Hung

Chiou

2002

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…3 Given the complex topography of modern microelectronic circuits, chemical deposition processes are considered better suited than their physical (directional) counterparts, and atomic layer deposition (ALD), a modern version of chemical vapor deposition (CVD) based on two or more self-limiting and complementary reactions, 4 offers the additional promise of film thickness control at the monolayer level. [22][23][24][25][26][27][28][29] However, only a subset of those have ever been tested for ALD, 26,[30][31][32][33][34][35] and, in general, the results have been disappointing, with the resulting films displaying high resistivities and poor structural characteristics. 8 Copper compounds that have been tried in the past for Cu CVD processes include alkoxides, 9 cyclopentadienyls, 10 acetamidinates, [11][12][13][14][15][16][17] guanidinates, 18,19 carboxylates, 20 oxalates, 21 and acetonates.…”

Section: Introductionmentioning

confidence: 99%

“…For the particular case of copper deposition, the drive has been to use Cu(I) complexes, because those may easily undergo disproportionation into Cu(0) and a volatile Cu(II) byproduct 22,24,25,53,54 However, such approach wastes at least half of the precursor, and provides a channel for continuous reactivity, defeating the self-limiting nature of ALD processes. Alternatively, it has also been suggested that copper metal films may be obtained in two steps, by growing a copper oxide layer first and then reducing that to the metallic state.…”

Section: Introductionmentioning

confidence: 99%

Chemistry of Cu(acac)2 on Ni(110) and Cu(110) surfaces: Implications for atomic layer deposition processes

Ma¹,

Zaera²

2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

The thermal chemistry of copper(II)acetylacetonate, Cu(acac)2, on Ni(110) and Cu(110) single-crystal surfaces was probed under vacuum by using x-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD). Some data for acetylacetone (Hacac, CH3COCH2COCH3) adsorbed on Ni(110) are also reported as reference. Chemical transformations were identified in several steps covering a temperature range from 150 K to at least 630 K. The desorption of Hacac and a 3-oxobutanal (CH3COCH2CHO) byproduct was observed first at 150 and 180 K on Ni(110) and at 160 and 185 K on Cu(110), respectively. Partial loss of the acetylacetonate (acac) ligands and a likely change in adsorption geometry are seen next, with the possible production of HCu(acac), which desorbs at 200 and 235 K from the nickel and copper surfaces, respectively. Molecular Cu(acac)2 desorption is observed on both surfaces at approximately 300 K, probably from recombination of Cu(acac) and acac surface species. The remaining copper atoms on the surface lose their remaining acac ligands to the substrate and become reduced directly to metallic copper. At the same time, the organic ligands follow a series of subsequent surface reactions, probably involving several C–C bond-scissions, to produce other fragments, additional Hacac and HCu(acac) in the gas phase in the case of the copper surface, and acetone on nickel. A significant amount of acac must nevertheless survive on the surface to high temperatures, because Hacac peaks are seen in the TPD at about 515 and 590 K and the C 1s XPS split associated with acac is seen up to close to 500 K. In terms of atomic layer deposition processes, this suggests that cycles could be design to run at such temperatures as long as an effective hydrogenation agent is used as the second reactant to remove the surface acac as Hacac. Only a small fraction of carbon is left behind on Ni after heating to 800 K, whereas more carbon and additional oxygen remains on the surface in the case of Cu.

show abstract

“…Copper is now widely accepted as a new interconnect material to replace aluminum and its alloys because of its lower resistivity (1.7 µ ·cm) and higher resistance to electromigration in comparison to others. [1][2][3][4] There are many deposition techniques for copper films including physical vapor deposition (PVD), chemical vapor deposition (CVD) and plating such as electroless plating and electroplating. Especially, electroplating is a very inexpensive process in principle and offers high deposition rate, so that a number of research groups have successfully used it to fill via holes and trenches with high aspect ratio in dual damascene structures.…”

Section: Introductionmentioning

confidence: 99%

Effects of Rapid Thermal Annealing after Plasma H₂ Pretreatment of the Copper Seed Layer Surface on Copper Electroplating

Oh¹,

Lee²,

Paul³

et al. 2001

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In ULSI fabrication, copper is widely accepted as a new interconnect material to replace aluminum and its alloys due to its low resistivity and high electromigration resistance. Cu seed layers for copper electroplating were deposited by magnetron sputtering on silicon wafers using TaN as diffusion barriers between the seed layer and silicon. Effects of plasma H 2 pretreatment and also the combined effects of plasma H 2 pretreatment and rapid thermal annealing of the Cu seed layers have been investigated on the physical properties including the resistivity, the grain size and the surface roughness of the electroplated copper films. The best physical properties were obtained for the electroplated copper film on the TaN film the surface of which was given the plasma H 2 treatment at the rf-power of 100 W for 10 min followed by rapid thermal annealing at 350 • C for 30 s. The mechanism of the cleaning process has also been discussed.

show abstract

Growth, selectivity and adhesion of CVD-deposited copper from Cu+1 (hexafluoroacetylacetonate trimethylvinylsilane) and dichlorodimethylsilane

Cited by 17 publications

References 7 publications

Curing of polyimide and the effect of the TEOS SiO2 barrier layer on the electromigration of sputtered Cu with polyimide passivation

Curing of polyimide and the effect of the TEOS SiO2 barrier layer on the electromigration of sputtered Cu with polyimide passivation

Chemistry of Cu(acac)2 on Ni(110) and Cu(110) surfaces: Implications for atomic layer deposition processes

Effects of Rapid Thermal Annealing after Plasma H₂ Pretreatment of the Copper Seed Layer Surface on Copper Electroplating

Contact Info

Product

Resources

About

Growth, selectivity and adhesion of CVD-deposited copper from Cu+1 (hexafluoroacetylacetonate trimethylvinylsilane) and dichlorodimethylsilane

Cited by 17 publications

References 7 publications

Curing of polyimide and the effect of the TEOS SiO2 barrier layer on the electromigration of sputtered Cu with polyimide passivation

Curing of polyimide and the effect of the TEOS SiO2 barrier layer on the electromigration of sputtered Cu with polyimide passivation

Chemistry of Cu(acac)2 on Ni(110) and Cu(110) surfaces: Implications for atomic layer deposition processes

Effects of Rapid Thermal Annealing after Plasma H2 Pretreatment of the Copper Seed Layer Surface on Copper Electroplating

Contact Info

Product

Resources

About

Effects of Rapid Thermal Annealing after Plasma H₂ Pretreatment of the Copper Seed Layer Surface on Copper Electroplating