Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer

Numata, Ryohei; Toko, Kaoru; Nakazawa, Kimitaka; Usami, Noritaka; Suemasu, Takashi

doi:10.1016/j.tsf.2013.08.040

Cited by 17 publications

(10 citation statements)

References 31 publications

(8 reference statements)

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“…Preferential (111) crystal orientation is also clearly visible in the GIXRD diffractogram and quantified by the calculated Lotgering values (Table 1). This type of (111) preferential orientation of the Ge crystallites has already been reported for similar samples in which a silica substrate, a Ge underlayer, 26,31 and an AlGeO x 27,31,32 diffusion barrier are combined and annealed at low temperature. Using only ex situ measurements, we could analyze the MIC-1 process in a similar fashion.…”

Section: ■ Discussionsupporting

confidence: 76%

“…All thicknesses and deposition rates are calibrated using a quartz scale inside the evaporator. Starting from a clean silica surface, we first deposit a 1 nm Ge underlayer 26 (at a rate of 0.01 nm/s), followed by 20 nm of Al (1−2 nm/s) which is coated with a 2 nm thin Ge layer (0.1 nm/s). This top Ge layer is exposed to air (9 min) to provide an AlGeO x diffusion barrier, 27 before the deposition of the final 20 nm Ge layer (1 nm/s).…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

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In Situ Optical Monitoring of New Pathways in the Metal-Induced Crystallization of Amorphous Ge

Pelati

Patriarche

Mauguin

et al. 2017

Crystal Growth & Design

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We use high-resolution optical microscopy to characterize in situ the processes at play during the Al-induced crystallization of amorphous Ge. In addition to the well-established aluminum-induced layer exchange (ALILE) process, we demonstrate the existence of another crystallization mechanism with different kinetics and spatial extension using in situ monitoring. Further, ex situ characterizations show that both processes are active in our samples. The ALILE process is found to create a single Ge layer and 111-oriented crystallites in our growth conditions, while the other crystallization process yields a double Ge layer with mixed 111 and 100 orientations in the bottom layer, while the top layer remains amorphous. This work underlines the importance of in situ monitoring for the understanding and modeling of metal-induced crystallization.

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Section: ■ Discussionsupporting

confidence: 76%

Section: ■ Experimental Sectionmentioning

confidence: 99%

In Situ Optical Monitoring of New Pathways in the Metal-Induced Crystallization of Amorphous Ge

Pelati

Patriarche

Mauguin

et al. 2017

Crystal Growth & Design

View full text Add to dashboard Cite

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“…The accumulation of Ge around Al grain boundaries due to enhanced diffusion leads to the nucleation and growth at the lowest ever temperature. , These are the main causes to reduce crystallization temperature. Table is prepared to show the interplay of various variables such as deposition methods, phase conversion conditions, and crystallization temperature in explaining a reduction in crystallization temperature. − ,,,,,− Better crystallization in Xe + ion-irradiated samples may also be understood in terms of recoils or the density of free atoms generated due to irradiation. It is evident that the number of recoils generated due to Xe + ions is significantly larger than that of Kr + ions.…”

Section: Resultsmentioning

confidence: 99%

Low Energy Ion-Induced Crystallization of Ge in c-Al/a-Ge Bilayer Thin Films at Low Temperatures of ∼125 °C

Maity,

Ojha,

Dubey

et al. 2023

Crystal Growth & Design

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The fabrication of polycrystalline Ge films at relatively low temperatures is of great importance for their applications in advanced microelectronic and solar cell devices. In this paper, we present the crystallization of Ge in a c-Al/a-Ge bilayer system at a temperature of 125 °C (lowest ever) using low energy ion beam irradiation followed by post-thermal annealing. The c-Al/a-Ge bilayer thin films are irradiated with 500 keV Kr + and Xe + ions at different fluences and then postannealed at a fixed temperature of 200 °C. The postannealing of the samples at a fixed temperature of 200 °C leads to the formation of polycrystalline Ge, and the crystallinity is observed to increase with increasing ion fluence. The crystallinity is found to be better in the samples irradiated by Xe + ions as compared to the Kr + ions. It is also observed that the thermal annealing of ion-irradiated samples yields better crystallinity than that of the samples that are annealed without irradiation. A temperature-dependent Raman measurement on samples irradiated with a fluence of 1 × 10 16 ions cm −2 reveals the crystallization of Ge at 125 °C. The concepts of layer exchange and irradiation-enhanced kinetics are invoked to explain the crystallization of Ge via different characterization techniques and by using the transport of ions in matter computer simulation code. The presented paper demonstrates the development of polycrystalline Ge at a relatively low temperature using a unique technique of ion irradiation, which may be realized for high performance advanced devices in the future.

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“…12) Moreover, MILC for various metal catalysts (gold, nickel, aluminum) of amorphous Ge has been reported. [20][21][22][23][24][25][26][27][28][29][30][31][32][33][34] However, the lateral crystallization of amorphous Ge is little reported when using magnesium (Mg) due to its high reactivity. In line with this, we have investigated the Mg-induced lateral crystallization (Mg-ILC) of amorphous Ge on a SiO 2 substrate.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Mg-induced lateral crystallization of amorphous germanium on an insulating substrate by two-step annealing

Morimoto,

Hirai,

Takazaiku

et al. 2024

Jpn. J. Appl. Phys.

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Magnesium (Mg) induced lateral crystallization (Mg-ILC) of amorphous Ge on SiO2 stacked structure was investigated. From Raman mapping images, the critical annealing temperature necessary to induce Mg-ILC of amorphous Ge was estimated to be about 350 oC. Furthermore, the Mg-ILC length was truly narrow (~ 2 µm) compared with other metal catalyst after annealing at 350 oC for 1hour. To enhance the Mg-ILC, we have examined a two-step annealing method for Mg-ILC of amorphous Ge on SiO2. The Mg-ILC length is significantly enhanced (~ 4.5 times) by using a two-step annealing process, which is due to the enhancement of Mg diffusion into amorphous Ge during the first stage low temperature annealing.

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Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer

Cited by 17 publications

References 31 publications

In Situ Optical Monitoring of New Pathways in the Metal-Induced Crystallization of Amorphous Ge

In Situ Optical Monitoring of New Pathways in the Metal-Induced Crystallization of Amorphous Ge

Low Energy Ion-Induced Crystallization of Ge in c-Al/a-Ge Bilayer Thin Films at Low Temperatures of ∼125 °C

Enhancement of Mg-induced lateral crystallization of amorphous germanium on an insulating substrate by two-step annealing

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