Growth, processing and properties of CVD diamond for optical applications

Mass and bond density measurements for PECVD a-SiCx:H thin films using Fourier transform-infrared spectroscopy

“…3, we find K CH ′ ranges from 1.8-4.2× 10 21 /cm 2 . These values are consistent with but slightly on the higher side of K CH values previously reported in the literature for a-C:H [36][37][38][39], DLC [39,[41][42][43], and a-SiC:H [28][29][30][31][32]44] films. In these studies, values of 2 × 10 20 to 3.8 × 10 21 /cm 2 have been reported for K CH with the lower values typically being reported for low density, polymeric like a-C:H and higher values being reported for high density, diamond like a-C:H (DLC) films (see Table 3).…”

“…The ability to qualitatively fingerprint and quantitatively measure the concentration of various chemical bonds by this technique has further led to the use of FTIR spectroscopy in numerous practical applications ranging from monitoring greenhouse gas emissions to quality control in manufacturing processes [1][2][3][4]. Within the semiconductor micro/nano-electronics industry, FTIR has also been utilized for quantitative measurements of a variety of materials of interest to the industry including: a-Si:H [5][6][7][8][9][10][11][12][13], a-SiO 2 [14][15][16][17][18][19], a-SiN x :H [20][21][22][23][24][25][26][27], a-SiC x :H [28][29][30][31][32][33][34][35][36], and a-C:H [37][38][39][40][41][42][43][44][45]. In these studies, FTIR has been utilized to determine the concentration of both terminal hydrogen bonding (Si-H, C-H, O-H, N-H) …”

Investigation of bonded hydrogen defects in nanocrystalline diamond films grown with nitrogen/methane/hydrogen plasma at high power conditions

“…Second, a strong absorption band between 1000 and 1400 cm -1 with maximum roughly around 1250 cm -1 still can be obviously distinguished in all the N-doped NCD samples despite of the strong interference patterns in the low frequency region. It is noteworthy to mention that for pure diamond single crystal, no first order absorption processes is active due to high symmetry of diamond [30]. The strong absorption band in the one-phonon region of the N-doped NCD films is due to the presence of impurities, lattice defects, grain boundaries, and strain in the films, which can break the symmetry of the lattice and activate one-phonon absorption processes.…”

Workshop on characterizing diamond films III:

“…. Other more specialized approaches that are being tested include the SiOx chemical machining process [6] and abrasive liquid jets. [7] Non-contact Systems …”