Growth process of Ge on Si(100)-(2×1)in atomic-layer epitaxy fromGe2

First principles total energy calculations of the adsorption of germane and digermane on Si(001)-c(2×4)

“…These SiH 3 subunits, at room temperature and low coverage, are further decomposed into dihydride molecules plus H atoms. On the other hand, ALE has proven to be an excellent technique for the layer-by-layer epitaxial growth of Ge on Si(0 0 1), with digermane (Ge 2 H 6 ) as the gas source [3,4]. The process starts with the saturation of the surface by digermane, and then followed by the heating of the surface to high temperatures producing two GeH 3 subunits.…”

“…Reactions may follow to finally obtain Ge dimers. Scanning tunneling microscopy [3] and high resolution core-level photoemission spectroscopy employing synchrotron radiation [3,4] studies have been performed on the adsorption of digermane on Si(0 0 1)-(2 · 1). These studies show that at temperatures below 100°K, the adsorption of GeH 3 is stable, however, at room temperature it is found that the adsorption of GeH 2 , GeH, and SiH is favored.…”

Atomic layer deposition of B2O3 thin films at room temperature

“…If deposition temperature is still further lowered to below 100°C, insufficient volatility of most solid precursors restricts their use in ALD. In the literature, there are some examples of ALD processes working around 100°C; these include the deposition of Al 2 O 3 [17], SiO 2 [18], MgO [19], ZrO 2 [20], HfO 2 [20], V 2 O 5 [21], Ge [22] and Pd [23]. In some processes however, special measures need to be taken to initiate or maintain the ALD growth.…”

Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge Coverages

“…The surface is under tensile stress along the dimer bond and under compressive stress normal to it. A variety of indirect evidence has been interpreted as suggesting that Ge and Si exchange sites in the (100) surface already at submonolayer Ge coverage [2][3][4]. Surface free-energy considerations suggest that at one monolayer (ML) coverage, the surface is terminated with pure Ge [2,5].…”