2024
DOI: 10.1016/j.jcrysgro.2024.127673
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Growth of β-Ga2O3 crystal with a diameter of 30 mm by laser-diode-heated floating zone (LDFZ) method

T. Ito,
Y. Tomioka,
F. Rackerseder
et al.
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Cited by 2 publications
(2 citation statements)
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“…Crystals 2024, 14, x FOR PEER REVIEW 14 of 21 grown crystal β-Ga2O3 using the system reached 30 mm [115]. The size increase of β-Ga2O3 should be useful for its application as a wide-gap semiconductor for optoelectronic devices.…”
Section: Floating-zone Furnaces With Laser Heating System 41 Developm...mentioning
confidence: 98%
See 1 more Smart Citation
“…Crystals 2024, 14, x FOR PEER REVIEW 14 of 21 grown crystal β-Ga2O3 using the system reached 30 mm [115]. The size increase of β-Ga2O3 should be useful for its application as a wide-gap semiconductor for optoelectronic devices.…”
Section: Floating-zone Furnaces With Laser Heating System 41 Developm...mentioning
confidence: 98%
“…Another example is a laser-heated furnace where the crystals can be grown under extremely high pressure up to 675 bar [88], thanks to the laser property with an inherently well-directional beam. Also, a higher laser power system with 20 kW can be equipped and the diameter of the grown crystal β-Ga 2 O 3 using the system reached 30 mm [115]. The size increase of β-Ga 2 O 3 should be useful for its application as a wide-gap semiconductor for optoelectronic devices.…”
Section: Floating-zone Furnaces With Laser Heating System 41 Developm...mentioning
confidence: 99%