Growth of β-Ga₂O₃ Single Crystals by the Edge-Defined, Film Fed Growth Method

Abstract

The successful growth of 2-in. -Ga 2 O 3 crystals by the edge-defined, film fed growth (EFG) method was demonstrated. The optimization of growth conditions for larger single crystalline -Ga 2 O 3 is discussed in detail. The seeding conditions of temperature and neck width were found to be the most important factors to grow single crystals. X-ray rocking curve measurements of -Ga 2 O 3 crystals were conducted to estimate the dislocation densities of the grown crystals. Etch pit densities (EPDs) of the -Ga 2 O 3 crystals were also measured using KOH solution to measure the dislocation densities. The results were discussed combining with crystal growth parameters such as neck width to clarify the mechanisms of propagation and the origin of dislocations in crystals from phenomenological and crystallographic points of view.

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

“…These wafers are fabricated from bulk single crystals synthesized by a variety of melt-growth techniques such as float-zone, [120,123] Czochralski, [124,125] vertical Bridgman, [126] and edge-defined film-fed growth (EFG) methods. [127][128][129] To date, EFG has an advantage over the other melt-growth methods in producing such wafers. Figure 6 displays a photograph of a 4-inch-diameter single-crystal Ga 2 O 3 wafer produced from an EFG-grown bulk crystal.…”

Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

“…Some preliminary studies on the material growth and power device fabrication and characterization have been carried out in the last several years. The easy, low-cost, and mass-producible melt-growth methods at atmospheric pressure, such as floating zone (FZ) 17,18 and the edge-defined film-fed growth (EFG), [19][20][21] have been utilized to fabricate the single-crystal b-Ga 2 O 3 substrates. Schottky diode based on the b-Ga 2 O 3 (001), 21 ( 201), 20,22 and (010) 23 substrate has been studied, but (100)-oriented bulk single crystal is rarely used in SBD, 24 especially by the EFG method.…”

Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques

“…Of the four distinct polymorphs, most research has focused on the monoclinic β-phase, which is the only thermodynamically stable phase from room temperature to its melting point at ∼ 1800 • C; all other polymorphs are metastable and have been reported to transform into the β-phase within the temperature range of 750-950 • C [6]. Single-crystal substrates of β-Ga 2 O 3 are grown by a variety of melt-based methods, including CONTACT Lisa M. Porter lporter@andrew.cmu.edu floating-zone (FZ) [7][8][9][10], edge-defined film-fed growth (EFG) [11], and Czochralski (CZ) [12,13] methods. Epitaxial films of β-Ga 2 O 3 have been grown using various vapor phase techniques, including metalorganic chemical vapor deposition (MOCVD) [14], molecular beam epitaxy (MBE) [1,[15][16][17][18][19], pulsed-laser deposition (PLD) [20], halide vapor phase epitaxy (HVPE) [21], and MIST epitaxy [22].…”