Growth of ZnSe thin films by electrocrystallization technique

Soundeswaran, S.; Kumar, O. S. Sunish; Dhanasekaran, R.; Ramasamy, P.; Kumaresen, R.; Ichimura, M.

doi:10.1016/s0254-0584(03)00226-8

Cited by 20 publications

(6 citation statements)

References 14 publications

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“…show the formation of pure ZnSe, which has the band gap energy of 2.65 and 2.69 eV. The insignificantly lower band gap energy of the ZnSe thin films than the bulk ZnSe (2.7 eV) [17], indicates the formation of ZnSe cubic phase [32]. In addition, the band gap energies of the ZnSe thin films deposited with solutions A and B are in good agreement with our XRD, XPS and FE-SEM results.…”

Section: Resultssupporting

confidence: 86%

Novel reduced toxic route synthesis and characterization of chemical bath deposited ZnSe thin films

Agawane

Shin

Suryawanshi

et al. 2014

Ceramics International

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Section: Resultssupporting

confidence: 86%

Novel reduced toxic route synthesis and characterization of chemical bath deposited ZnSe thin films

Agawane

Shin

Suryawanshi

et al. 2014

Ceramics International

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“…Electrodeposition is one of the most widely accepted techniques for the economical and efficient growth of thin films from liquid phase, and many reports are available on the deposition of various thin films by this method. [6][7][8] However, the electrodeposition of silicon has not been well understood because of considerably negative reduction potential and the high reactivity of most silicon compounds with water. Molten salt electrolyte medium is employed for the electrodeposition of Si.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical Behavior of Silicon in the (NaCl-KCl-NaF-SiO2) Molten Salt

Cai¹,

Li²,

He³

et al. 2010

Metall Mater Trans B

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The electrochemical behavior of silicon was investigated in a molten salts system including saturation silicon dioxide. Silicon was electrodeposited and MoSi 2 was formed on the employed molybdenum working electrode by the diffusivities of silicon and the substrate metals. Transient electrochemical techniques such as cyclic voltammetry and chronoamperometry were used to study the reaction mechanism at the molybdenum electrode. Cyclic voltammograms showed the possibility of electrodeposition of Si at À0.64 V versus Pt reference electrode in a NaCl-KClNaF-SiO 2 system at 1073 K (800°C). The electrodeposition of Si is single-step charge-transfer process and the cathode process is irreversible. Chronoamperometry studies indicated that electrocrystallization of Si is controlled by progressive nucleation with a three-dimensional growth mechanism.

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“…The main advantages of this method are simplicity, low energy consumption, accurate control of film thickness, composition and morphology [5,6]. That is why the electrochemical method has recently attracted a lot of attention [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%