Growth of ZnO nano-wire arrays using AAO template and atomic-layer deposition method

Hsu, W. C.; Kuo, Chin-Guo; Chao, Yi-Chieh; Lee, Jeen-Fong; Yang, Cheng–Fu; Juang, Feng-Renn

doi:10.1109/icasi.2016.7539895

Cited by 2 publications

(3 citation statements)

References 8 publications

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“…Nanoporous anodized aluminum oxide (AAO) provides a (dielectric) host for template synthesis of low-dimensional nanostructures 1 via deposition of polymers, 2,3 electrochemical deposition, 4−6 sol−gel deposition, 7 chemical vapor deposition, 8 and atomic layer deposition. 9 AAO films are also used in bio-, 10 optical, 11 and chemical 12 sensing. In the aluminum industry, AAO serves as a layer for improved hardness, corrosion resistance, 13 wear resistance, and coloring of aluminum.…”

Section: ■ Introductionmentioning

confidence: 99%

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Thermal Hardening and Defects in Anodic Aluminum Oxide Obtained in Oxalic Acid: Implications for the Template Synthesis of Low-Dimensional Nanostructures

Aman

Wied

Alhusaini

et al. 2019

ACS Appl. Nano Mater.

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This study addresses the investigation of the nature of defects generated during the anodization of aluminum using oxalic acid electrolyte and their influence on the structure and properties of anodic aluminum oxide films (AAO). AAO films, which are obtained by anodization in oxalic acid, and their powdered samples are subjected to thermal annealing at temperatures up to 1050 °C and are subsequently investigated by 27 Al solid-state nuclear magnetic resonance (NMR), electron spin resonance (ESR), powder X-ray diffraction, scanning electron microscopy (SEM), and nanoindentation. By NMR and continuous wave ESR, it is found that the anodization obtained in oxalic acid not only produces amorphous porous alumina, but also gives rise to bulk H defects and unpaired electrons originating from the decomposition of the oxalate ions. Paramagnetic defects are healed by annealing at temperatures of ∼800 °C in air, possibly by an oxidative conversion to CO 2 with the oxygen in air, while the removal of the H defects requires temperatures of at least 1050 °C. The observed hardening of the films and color changes can be explained by changes in structure on an atomic scale and changes in composition: amorphous AAO is converted to a poorly crystalline intermediate phase containing η-Al 2 O 3 at ∼800 °C and subsequently to crystalline α-Al 2 O 3 (corundum) at ∼1050 °C. Moreover, thermal hardening of an AAO passivation layer on top of metallic aluminum with the flame of a H 2 /O 2 burner was demonstrated.

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Section: ■ Introductionmentioning

confidence: 99%

“…Nanoporous anodized aluminum oxide (AAO) provides a (dielectric) host for template synthesis of low-dimensional nanostructures via deposition of polymers, , electrochemical deposition, − sol–gel deposition, chemical vapor deposition, and atomic layer deposition . AAO films are also used in bio-, optical, and chemical sensing.…”

Section: Introductionmentioning

confidence: 99%

Thermal Hardening and Defects in Anodic Aluminum Oxide Obtained in Oxalic Acid: Implications for the Template Synthesis of Low-Dimensional Nanostructures

Aman

Wied

Alhusaini

et al. 2019

ACS Appl. Nano Mater.

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“…After that, the AAO template dissolved in the sodium hydroxide (NaOH) solution and the ZnO nanowires with a high aspect ratio were exposed, as shown in Figure 1 . For details of the procedure for the formation of the ZnO nanowires, refer to our previous paper [ 17 ].…”

Section: Methodsmentioning

confidence: 99%

Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas

Kuo

Chen

Chao

et al. 2017

Sensors

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In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good electrical conductivity. In this work, P3HT was coated on the zinc oxide nanowires by the spin coating to form an organic-inorganic heterogeneous interface of the gas sensor for detecting ammonia gas. The thicknesses of the P3HT were around 462 nm, 397 nm, and 277 nm when the speeds of the spin coating were 4000 rpm, 5000 rpm, and 6000 rpm, respectively. The electrical properties and sensing characteristics of the gas sensing device at room temperature were evaluated by Hall effect measurement and the sensitivity of detecting ammonia gas. The results of Hall effect measurement for the P3HT-ZnO nanowires semiconductor with 462 nm P3HT film showed that the carrier concentration and the mobility were 2.7 × 1019 cm−3 and 24.7 cm2∙V−1∙s−1 respectively. The gas sensing device prepared by the P3HT-ZnO nanowires semiconductor had better sensitivity than the device composed of the ZnO film and P3HT film. Additionally, this gas sensing device could reach a maximum sensitivity around 11.58 per ppm.

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Growth of ZnO nano-wire arrays using AAO template and atomic-layer deposition method

Cited by 2 publications

References 8 publications

Thermal Hardening and Defects in Anodic Aluminum Oxide Obtained in Oxalic Acid: Implications for the Template Synthesis of Low-Dimensional Nanostructures

Thermal Hardening and Defects in Anodic Aluminum Oxide Obtained in Oxalic Acid: Implications for the Template Synthesis of Low-Dimensional Nanostructures

Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas

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