2010
DOI: 10.1016/j.matlet.2009.09.060
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Growth of ZnO crystal on sapphire and nitridated sapphire substrates at 1000°C by halide vapor phase epitaxy

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Cited by 3 publications
(2 citation statements)
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“…1(a)]. 13) Each island has a tendency to grow longitudinally as the growth proceeds; therefore, a ZnO layer on a (0001) sapphire substrate could not be formed at this temperature, even when the growth time was extended. Island growth was also observed at 800, 600, and 500 C [Figs.…”
Section: Resultsmentioning
confidence: 99%
“…1(a)]. 13) Each island has a tendency to grow longitudinally as the growth proceeds; therefore, a ZnO layer on a (0001) sapphire substrate could not be formed at this temperature, even when the growth time was extended. Island growth was also observed at 800, 600, and 500 C [Figs.…”
Section: Resultsmentioning
confidence: 99%
“… 20–23 However, the specific properties of this oxide are influenced by several parameters including the structure, size, shape, morphology, and the porous texture. Several methods have already been developed to synthesise ZnO (powder or thin films), especially to control its morphology and porous texture, mainly by the following processes: chemical vapor deposition, 24 radio frequency magnetron sputtering, 25 spray pyrolysis, 26 molecular beam epitaxy, 27 pulse laser deposition, 28 atomic layer deposition, 29 hybrid-vapor phase epitaxy, 30 metal–organic vapor phase epitaxy, 31 vapor-phase synthesis, 32 synthesis from the melt, 33 hydrothermal synthesis, 34 precipitation, 35 co-precipitation, 36 and sol–gel 37 and sol–gel assisted ultrasonic methods. 38 In line with this, several morphological forms of zinc oxide including nanorods, nanotubes, hollow structures, nanocubes, flower-like structures, and nanospheres were prepared.…”
Section: Introductionmentioning
confidence: 99%