Growth of YIG films by solid phase epitaxy and their properties

Abstract

PACS 75.50.Gg, 75.70.Ak, For epitaxial growth of YIG films by sputtering, methods of both direct growth and solid phase epitaxy (SPE) were used. However, it was very hard to sputter at high temperature for the direct growth of epitaxial YIG films. Instead, the SPE is a very useful and easy method for growing YIG epitaxial films. It was very effective to add a small amount of oxygen to suppress the formation of the YFeO 3 phase in the SPE. The crystallization temperature of the Fe -Y -O amorphous films on GGG (111) substrate was much lower than that of Fe -Y -O powder. An excellent epitaxial growth of YIG films could be confirmed with XRD by both very high intensities and very low values of the full width at half maximum of the YIG (888) plane. It could be seen that it is necessary to anneal the films at higher temperature for excellent epitaxy. The films annealed at higher temperature shows M -H loops with perpendicular anisotropy which was due to 0.15% lattice mismatch between YIG and GGG.

Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

“…4(a), consistent with the previous reported values. 28,33 We finally comment on the difference on the AFM mediated spin transport between the spin pumping or spin Seebeck result and our SMR result. In the former cases, the spin current was created in the YIG layer and the spin current detected in the Pt was found to be enhanced in the presence of the thin AFMI layer, and furthermore the spin current could penetrate to the AFMI as large as 10 nm.…”

Spin current generation from sputtered Y3Fe5O12 films

“…In the sputtering method, the growth of crystals can be realized either by direct epitaxial growth via sputtering at high temperatures 29,32,36,38 or by sputtering at room temperature and subsequent post-annealing. [30][31][32][33][34][35]38 Direct epitaxial growth at high temperature can provide crystals of excellent quality. 36 However, the sputtering rates are usually very low 30,34 and the sample quality sensitive to the conditions during deposition.…”

“…In quest of controlling YIG thickness at nanometer scale, the growth of thin films by pulsed-laser deposition (PLD) [24][25][26][27][28] and sputtering [29][30][31][32][33][34][35][36][37][38][39][40][41][42][43] has attracted interest. In the sputtering method, the growth of crystals can be realized either by direct epitaxial growth via sputtering at high temperatures 29,32,36,38 or by sputtering at room temperature and subsequent post-annealing. [30][31][32][33][34][35]38 Direct epitaxial growth at high temperature can provide crystals of excellent quality.…”