Growth of Ultrathin Epitaxial 3C-SiC Films on Si(100) by Pulsed Supersonic Free Jets of CH₃SiH₃

Abstract

We propose a novel resonant detector of terahertz radiation based on a heterostructure with an ungated two-dimensional electron channel, with a lateral Schottky junction at one of the channel edges, substantiate its operation, and evaluate the device characteristics. We demonstrate that the detector responsivity can exhibit sharp resonant maxima at the frequencies pertaining to the plasma oscillations. As shown, the peak values of the responsivity of the detector proposed can exceed the responsivity of the standard Schottky detectors by several orders of magnitude if the electron mobility in the channel is sufficiently high.

Low Temperature Chemical Vapour Deposition of Polycrystalline Silicon Carbide Film Using Monomethylsilane Gas

“…This shows that the film deposition stops within 1 minute. This coincides with those obtained by Ikoma et al (Ikoma., 1999) and Boo et al (Boo et al, 1999) using monomethylsilane gas. Fig.…”

Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

“…(1)- (8), are expected to affect the film composition. Si 2 H x is very easily decomposed to produce silicon clusters in the gas phase or on the substrate surface, in Eq.…”

“…Here, methylsilanes, such as monomethylsilane and dimethylsilane, are expected to allow lower temperature silicon carbide film formation than the ordinary technique using silane and hydrocarbon gases, such as propane [2,3], because methylsilanes have a covalent bond between the silicon and carbon in its molecular structure. Thus, many researchers have studied silicon carbide film formation technology using monomethylsilane gas [4][5][6][7][8][9][10][11][12], as well as dimethylsilane [13].…”

“…For an industrial application, information about issue (iii) is necessary in order to adjust and obtain the required thickness of the silicon carbide film, because the saturation of film deposition has been reported by many researchers [8,9]. Therefore, in this study, the authors focus on the chemical reactions of monomethylsilane gas that form a silicon carbide film on a silicon surface at low temperatures.…”

Application of Ion Beam Induced Chemical Vapor Deposition for SiC Film Formation on Si Substrates using Methylsilane

“…Subsequent various studies [5][6][7][8][9][10][11][12][13][14][15][16][17] also succeeded in producing SiC films on Si using various deposition methods with methylsilane. In those studies [4][5][6][7][8][9][10][11][12][13][14][15][16][17], methylsilane was selected as a gas source because the methylsilane molecule has a Si-C bond and its stoichiometric composition (atomic concentration ratio of Si to C) is the same as that of SiC. On the other hand, Xu et al reported that the dissociative adsorption of methylsilane onto the Si surface broke the Si-C bond [18].…”