2006
DOI: 10.1016/j.jcrysgro.2006.06.035
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Growth of transparent conducting nanocrystalline Al doped ZnO thin films by pulsed laser deposition

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Cited by 157 publications
(53 citation statements)
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References 21 publications
(28 reference statements)
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“…Intercept on the energy axis obtained by extrapolating the linear portion of the Tauc's plot, i.e., (ahv) 2 vs. hv plot, as shown in carrier concentration had been found to increase viz. Fe 3+ doped ZnO by Xu et al [20], Al doped ZnO by Shukla et al [1] and Das et al [9]. For Mg doped ZnO band gap enhance− ment is well known but reason is hardly reported.…”
Section: Transmission and Optical Band Gapmentioning
confidence: 99%
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“…Intercept on the energy axis obtained by extrapolating the linear portion of the Tauc's plot, i.e., (ahv) 2 vs. hv plot, as shown in carrier concentration had been found to increase viz. Fe 3+ doped ZnO by Xu et al [20], Al doped ZnO by Shukla et al [1] and Das et al [9]. For Mg doped ZnO band gap enhance− ment is well known but reason is hardly reported.…”
Section: Transmission and Optical Band Gapmentioning
confidence: 99%
“…Specifically, zinc oxide which has large direct band gap (3.37 eV) and exciton binding (60 meV) energies is inexpensive and environmentally safe, and has been identified as a promising host material [1][2][3]. Possible applications of ZnO films is in photonic devices such as UV light emitting diodes, UV lasers and blue luminescent devices, photodetectors, transparent conducting electrodes, surface acoustic wave devices, as well as in gas sensors.…”
Section: Introductionmentioning
confidence: 99%
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“…ZnO has drawn attention due to the abundance of raw materials, nontoxicity, and chemical stability [4]. The addition of Group III metal dopants, such as Al, In and Ga, increases the electrical conductivity and transparency of ZnO films [5]. Of these dopants, Ga has several advantages, in that it is less reactive and more resistant to oxidation than Al [6].…”
Section: Introductionmentioning
confidence: 99%