1997
DOI: 10.1016/s0040-6090(96)09455-2
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Growth of Ti:sapphire single crystal thin films by pulsed laser deposition

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Cited by 54 publications
(28 citation statements)
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“…The high melting temperature of these crystals in combination with their phase transition point that lies below their melting point, make their growth in bulk form very challenging [116]. In this respect, another notable example is the deposition of Ti:sapphire layers with a degree of crystal perfection comparable with the commercial bulk crystals used as targets, at temperatures around 975ºC, which is well below the melting temperature of the bulk crystal (~2200ºC) [117]. Finally, it is worth noting that PLD has also proven suitable for two-dimensional, lattice matched, layer-by-layer growth of rare-earthactivated planar waveguides [103,104,118].…”
Section: Pulsed Laser Deposition (Pld)mentioning
confidence: 99%
“…The high melting temperature of these crystals in combination with their phase transition point that lies below their melting point, make their growth in bulk form very challenging [116]. In this respect, another notable example is the deposition of Ti:sapphire layers with a degree of crystal perfection comparable with the commercial bulk crystals used as targets, at temperatures around 975ºC, which is well below the melting temperature of the bulk crystal (~2200ºC) [117]. Finally, it is worth noting that PLD has also proven suitable for two-dimensional, lattice matched, layer-by-layer growth of rare-earthactivated planar waveguides [103,104,118].…”
Section: Pulsed Laser Deposition (Pld)mentioning
confidence: 99%
“…All films employed for the investigation were grown at substrate temperatures of 975 C and had a thickness of 11 m. To localize the substrate heating and to prevent contamination through desorption from the walls of the deposition chamber, a 100 W CO laser (Synrad 57-1-28 W) was used as a heating source. This heating technique has already been implemented successfully in PLD [12], [13].…”
Section: A Fabrication Techniquesmentioning
confidence: 99%
“…Other methods for fabricating Ti:sapphire channel waveguides include femtosecond laser writing [7], ion indiffusion [8], and pulsed laser deposition [9] in combination with reactive ion etching [10,11]. The latter methods have lead to the demonstration of broadband luminescent emitters [12], which show potential as light sources in optical coherence tomography [13], and planar [14], rib channel [15], and in-diffused channel [16] waveguide lasers.…”
Section: Proton-implanted Ti:sapphire Channel Waveguide Lasersmentioning
confidence: 99%