Abstract:In this study, ternary ferroelectric 0.06Pb(Mn1/3Nb2/3)O3–0.94Pb(Zr0.48Ti0.52)O3 (PMN–PZT) thin film with high piezoelectric coefficient were grown on La0.6Sr0.4CoO3‐buffered Pt/Ti/SiO2/Si substrate by RF magnetron sputtering method. The phase and domain structure along with the macroscopic electrical properties were obtained. Under the optimized temperature of 550°C and sputtering pressure 0.9 Pa, the PMN–PZT film owned large remnant ferroelectric polarization of 62 μC/cm2. In addition, the PMN–PZT film had p… Show more
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