Growth of the half-Heusler alloy NiMnSb on (In,Ga)As/InP by molecular beam epitaxy

Bach, P.; Rüster, C.; Gould, C.; Becker, C. R.; Schmidt, G.; Molenkamp, L. W.

doi:10.1016/s0022-0248(02)02151-6

Cited by 21 publications

(11 citation statements)

References 6 publications

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“…The growth of single crystal material also allows magnetocrystalline anisotropy to be exploited, which is not possible for amorphous or disordered layer structures. Extensive studies of MnSb and NiMnSb have been undertaken in recent years to elucidate their structural [10,11] and magnetic properties [12,13]. The ternary materials present greater challenges in terms of crystal growth: for example, NiMnSb may suffer from Mn surface segregation [14], atomic disorder [15] and the formation of NiSb inclusions [9], as well as difficulties in surface re-preparation [16,17].…”

Section: Introductionmentioning

confidence: 99%

Growth and characterisation of NiSb(0001)/GaAs(111)B epitaxial films

Aldous

Burrows

Maskery

et al. 2012

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Growth and characterisation of NiSb(0001)/GaAs(111)B epitaxial films

Aldous

Burrows

Maskery

et al. 2012

Journal of Crystal Growth

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“…Towards this goal, it has been grown epitaxially by molecular-beam epitaxy ͑MBE͒ onto GaAs͑001͒, 1 GaAs͑111͒B, 2 and InP/InGaAs ͑001͒ substrates. 3 However, the demonstration of a high degree of spin polarization at a surface or interface of this material has yet to be reported.…”

Section: Introductionmentioning

confidence: 99%

“…The lattice constant for the stoichiometric phase grown epitaxially on GaAs has been reported to range between 0.5904 and 0.5909 nm, 1 and therefore, there is a larger lattice mismatch with GaAs compared to InP, 4.4% vs 0.6%. Pseudomorphic films in compression have been successfully grown on InP using an InGaAs buffer layer, 3 whereas the GaAs film interfaces would have been heavily dislocated.…”

Section: Introductionmentioning

confidence: 99%

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Structural and magnetic properties of NiMnSb/InGaAs/InP(001)

Koveshnikov

Woltersdorf

Liu

et al. 2005

Journal of Applied Physics

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The structural and magnetic properties of NiMnSb films, 5-120 nm thick, grown on InGaAs/ InP͑001͒ substrates by molecular-beam epitaxy, were studied by x-ray diffraction, transmission electron microscopy ͑TEM͒, and ferromagnetic resonance ͑FMR͒ techniques. X-ray diffraction and TEM studies show that the NiMnSb films had the expected half-Heusler structure, and films up to 120 nm were pseudomorphically strained at the interface, greater than the critical thickness for this system, about 70 nm ͑0.6% mismatch to InP͒. No interfacial misfit dislocations were detected up to 85 nm, however, relaxation in the surface regions of films thicker than 40 nm was evident in x-ray reciprocal space maps. TEM investigations show that bulk, planar defects are present beginning in the thinnest film ͑10 nm͒. Their density remains constant but they gradually increase in size with increasing film thickness. By 40 nm these defects have overlapped to form a quasicontinuous network aligned closely with ͗100͘ in-plane directions. The associated strain fields and or compositional ordering from these defects introduced a reduction in crystal symmetry that influenced the magnetic properties. The in-plane and perpendicular FMR anisotropies are not well described by bulk and interface contributions. In thick films, the in-plane uniaxial and fourfold anisotropies increased with increasing film thickness. The lattice defects resulted in a large extrinsic magnetic damping caused by two-magnon scattering, an increase in the coersive field with increasing film thickness, and a lower magnetic moment ͑3.6 Bohr magnetons͒ compared to the expected value for the bulk crystals ͑4 Bohr magnetons͒.

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“…Subsequently NiMnSb layers of variable thicknesses were grown. All growth processes were monitored using reflection high-energy electron diffraction (RHEED) with an energy of 10 keV [15,16]. Two series of NiMnSb thin films were produced.…”

Section: Methodsmentioning

confidence: 99%

Structure and relaxation effects in thin semiconducting films and quantum dots

Kumpf

Stahl

Gierz

et al. 2007

Phys. Status Solidi (c)

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InP(001) substrate and free-standing CdSe quantum dots on a ZnSe(001) surface. For the first system the influence of surface-oxidation on the relaxation behavior of the entire film was investigated by a comparison of capped and uncapped samples. We found that the critical thickness for pseudomorphic growth is more than doubled by the protective capping layers. For the second system under investigation a determination of the size and shape of the quantum dots was performed. They have a cylindrical shape with an almost constant diameter of ≈ 10 nm and a height of about 2 nm, whereby the lowermost region widens up to about 14 nm. The entire quantum dots are strained.

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Growth of the half-Heusler alloy NiMnSb on (In,Ga)As/InP by molecular beam epitaxy

Cited by 21 publications

References 6 publications

Growth and characterisation of NiSb(0001)/GaAs(111)B epitaxial films

Growth and characterisation of NiSb(0001)/GaAs(111)B epitaxial films

Structural and magnetic properties of NiMnSb/InGaAs/InP(001)

Structure and relaxation effects in thin semiconducting films and quantum dots

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