Growth of ternary InxGa1−xAs bulk crystals with a uniform composition through supply of GaAs

Recent developments in modelling of liquid phase electroepitaxy under applied magnetic field

“…Such features of LPEE make this technique technologically very promising (see for instance [18][19][20][21][22][23][24][25][26][27][28]), and it has a great potential to become a commercial technique in growing high quality, bulk crystals such as GaInAs, GaInSb, CdZnTe, and SiGe (see Refs. [10,11,23,25,27]). …”

Numerical analysis of crystal growth of an InAs–GaAs binary semiconductor by the Travelling Liquidus-Zone method under microgravity conditions

“…The linear temperature and concentration distributions in the solution coincide very closely with the liquidus curve on the phase diagram if the temperature difference between the two interfaces is small (see Fig. 2 for the phase diagram of the InAs-GaAs binary system [4]). That is why this crystal growth method is called the Travelling LiquidusZone method.…”

“…Therefore, microgravity experiments of crystal growth have been carried out in recent years using drop towers, aircraft, rockets, space shuttles and satellites in order to reduce buoyancy convection and grow high quality crystals [1][2][3][4][5][6][7]. Now, the International Space Station is expected to come into operation in 2005 so that crystal growth experiments can be carried out under better conditions; that is, the long duration of low residual gravity conditions ($1 lg) is available.…”

X-Ray High-Resolution Diffraction and Transmission Topography Study of InGaAs Grown by Liquid Encapsulated Czochralski Technique

“…It is known from InAs-GaAs pseudo-binary phase diagram [18] that the slope of the solid-liquid line becomes flatter with lowered temperature, resulting in composition changes. In order to control such fluctuations it is necessary to stabilize the temperature which in turn requires stabilization of the composition of the growth melt.…”