Growth of SnI2 and SnI4 single crystals in silica gels

1983

Bull. Mater. Sci.

The variation in the microhardness of tin-di-iodide (SnI2) and tin-tetra-iodide (SnI4) crystals has been determined using Vicker's microhardness indentor. It is observed that the microhardness of the crystals depends on the applied load and is independent of the duratidn of loading. Viekers Hardness Numerals (VHN) for SnI 2 is found to be greater than that of SnI 4 crystals. Mayer's equation and implications have been discussed.

Section: Introductionmentioning

confidence: 99%

Microhardness studies of SnI2 and SnI4 single crystals

1983

Bull. Mater. Sci.

Microstructures on {111} faces of stannic iodide single crystals

1981

Cryst Res and Technol

Single crystals of stannic iodide (SnI,) havebeen grown using the controlled reaction between SnC1, and K I by diffusion process in silica gel medium. Orange to reddish octahedral stannic iodidc crystals up t o 3 -4 mm in size have been grown a t room temperature.Optical studies have been made on the various surface structures of { 11 1 ] faces of the asgrown crystals. On octahedral faces of these crystals, triangular-shaped hillocks with growth layers in the

Dislocation etching of tin iodide single crystals

1983

Cryst. Res. Technol.

Single crystals of tin-iodide (SnT,) have been grown using the controlled reaction between SnCl, and K I by diffusion process in gel medium. As grown (010) surfaces of the crystals have been optically studied. Characteristic etch pits have been observed on them. This suggests that SnI, crystals might go into dissolution in the acid-set gel. By successively etching (010) surfaces in a mixturc of ammonia,, acetic acid, and CdCl, solution, it is established that the pits indicate the site of dislocations in the crystals. This is further confirmed by comparing the etch patterns before and after chemically polishing (010) surfaces. The average dislocation density in the crystals have been evaluated and found to be 3.2 x lo3 a,nd the implications are discussed.