Growth of SiO
            <sub>2</sub>
            at Room Temperature with the Use of Catalyzed Sequential Half-Reactions

Klaus, J. W.; Sneh, Ofer; George, Steven M.

doi:10.1126/science.278.5345.1934

Cited by 213 publications

(259 citation statements)

References 18 publications

(5 reference statements)

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“…Previous studies have reported the use of Lewis bases such as NH 3 and pyridine as catalysts for low temperature growth of SiO 2 . 25,26 While these studies were done using gas phase reactants, it is possible that a similar mechanism is responsible for the growth of oxides on the SiGe surface in (NH 4 ) 2 S solutions which contain both NH þ 4 and NH 3 even though nitrogen species were not detected in the XPS (supplementary material, Fig. 1).…”

Section: Discussionmentioning

confidence: 99%

Reaction of aqueous ammonium sulfide on SiGe 25%

Heslop

Peckler

Muscat

2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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SiGe 25% substrates were treated with aqueous solutions of ammonium sulfide with and without added acid to understand the adsorption of sulfur on the surface. X-ray photoelectron spectroscopy showed no sulfide layer was deposited from aqueous (NH 4 ) 2 S alone and instead both Si and Ge oxides formed during immersion in the sulfur solution. The addition of hydrofluoric and hydrochloric acids dropped the pH from 10 to 8 and deposited sulfides, yet increased the oxide coverage on the surface and preferentially formed Ge oxides. The sulfur coverage grew with increasing concentrations of acid in the aqueous (NH 4 ) 2 S. The simultaneous deposition of O and S is suspected to be the result of oxidized sulfur species in solution. Metal-insulator-semiconductor capacitor (MISCAP) devices were fabricated to test the electrical consequences of aqueous ammonium sulfide wet chemistries on SiGe. MISCAPs treated with acidic ammonium sulfide solutions contained fewer interface defects in the valence band region. The defect density (D it ) was on the order of 10 þ12 cm -2 eV À1. The flat band voltage shift was lower after the acidic ammonium sulfide treatment, despite the presence of surface oxides. Adsorption of S and potentially O improved the stability of the surface and made it less electrically active.

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Section: Discussionmentioning

confidence: 99%

Reaction of aqueous ammonium sulfide on SiGe 25%

Heslop

Peckler

Muscat

2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The use of bases to catalyze the reaction SiCl 4 + 2 H 2 O!SiO 2 + 4 HCl, and reductive pulses in the preparation of nitride films represent some existing examples. [15,33] The third component may introduce a new element into the film, as is in the serendipitous case of WC x N y , where improved barrier properties and process integration were obtained.…”

Section: Angewandte Chemiementioning

confidence: 97%

Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

2003

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New materials, namely high-k (high-permittivity) dielectrics to replace SiO(2), Cu to replace Al, and barrier materials for Cu, are revolutionizing modern integrated circuits. These materials must be deposited as very thin films on structured surfaces. The self-limiting growth mechanism characteristic to atomic layer deposition (ALD) facilitates the control of film thickness at the atomic level and allows deposition on large and complex surfaces. These features make ALD a very promising technique for future integrated circuits. Recent ALD research has mainly focused on materials required in microelectronics. Chemistry, in particular the selection of suitable precursor combinations, is the key issue in ALD; many interesting results have been obtained by smart chemistry. ALD is also likely to find applications in other areas, such as magnetic recording heads, optics, demanding protective coatings, and micro-electromechanical systems, provided that cost-effective processes can be found for the materials required.

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“…ALD SiO 2 films may find application as protective or insulator coating, or can be used in nanolaminate structures with tailored optical and electronic properties. 10,11 The films can also be used in spacer defined double patterning processes for example for dynamic random access memory (DRAM) technology. 12 In addition, the ALD SiO 2 process may be useful for engineering the interface between Si and high-k materials.…”

mentioning

confidence: 99%

“…25 SiO 2 films grown with ALD have been reported to exhibit low carbon content, and a high electrical breakdown field. 10,22 Nevertheless, to improve properties such as the chemical etch rate or the interface defect density, annealing at a temperature of 1000…”

mentioning

confidence: 99%

Plasma-Assisted ALD for the Conformal Deposition of SiO₂: Process, Material and Electronic Properties

Dingemans

Helvoirt

Pierreux

et al. 2012

J. Electrochem. Soc.

136

138

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Plasma-assisted atomic layer deposition (ALD) was used to deposit SiO 2 films in the temperature range of T dep = 50-400 • C on Si(100). H 2 Si[N(C 2 H 5 ) 2 ] 2 and an O 2 plasma were used as Si precursor and oxidant, respectively. The ALD growth process and material properties were characterized in detail. Ultrashort precursor doses (∼50 ms) were found to be sufficient to reach self-limiting ALD growth with a growth-per-cycle of ∼1.2 Å (T dep = ∼200 • C) leading to SiO 2 films with O/Si ratio of ∼2.1. Moreover, the plasma ALD process led to a high conformality (95-100%) for trenches with aspect ratios of ∼30. In addition, the electronic (interface) properties of ultrathin ALD SiO 2 films and ALD SiO 2 /Al 2 O 3 stacks were studied by capacitance-voltage and photoconductance decay measurements. The interface quality associated with SiO 2 was improved significantly by using an ultrathin ALD Al 2 O 3 capping layer and annealing. The interface defect densities decreased from ∼1×10 12 eV −1 cm −2 (at mid gap) for single layer SiO 2 to < 10 11 eV −1 cm −2 for the stacks. Correspondingly, ultralow surface recombination velocities < 3 cm/s were obtained for n-type Si. The density and polarity of the fixed charges associated with the stacks were found to be critically dependent on the SiO 2 thickness (1-30 nm).

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Growth of SiO ₂ at Room Temperature with the Use of Catalyzed Sequential Half-Reactions

Cited by 213 publications

References 18 publications

Reaction of aqueous ammonium sulfide on SiGe 25%

Reaction of aqueous ammonium sulfide on SiGe 25%

Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

Plasma-Assisted ALD for the Conformal Deposition of SiO₂: Process, Material and Electronic Properties

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Growth of SiO 2 at Room Temperature with the Use of Catalyzed Sequential Half-Reactions

Cited by 213 publications

References 18 publications

Reaction of aqueous ammonium sulfide on SiGe 25%

Reaction of aqueous ammonium sulfide on SiGe 25%

Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties

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Growth of SiO ₂ at Room Temperature with the Use of Catalyzed Sequential Half-Reactions

Plasma-Assisted ALD for the Conformal Deposition of SiO₂: Process, Material and Electronic Properties