Growth of Single-Walled Carbon Nanotubes by Hot-Filament Assisted Chemical Vapor Deposition below 500 °C

Ishikawa, Yutaka; Ishizuka, Kei

doi:10.1143/apex.2.045001

Cited by 12 publications

(9 citation statements)

References 11 publications

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“…In order to further extend our comparison, we included the CNT synthesis results from the reports above and below our current process temperatures. [32][33][34][35][36][37][38] For low temperature syntheses, ∼510 to ∼450 °C, the growth rates were exceptionally slow ∼0.15 to ∼0.1 μm min −1 , but there was no information regarding the catalyst lifetime and could not be included in the figure. [36][37][38] From Fig.…”

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confidence: 99%

“…[32][33][34][35][36][37][38] For low temperature syntheses, ∼510 to ∼450 °C, the growth rates were exceptionally slow ∼0.15 to ∼0.1 μm min −1 , but there was no information regarding the catalyst lifetime and could not be included in the figure. [36][37][38] From Fig. 2b (square), we observe the following: first, these additional points exhibit the same inverse relationship between the growth rate and the lifetime.…”

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The relationship between the growth rate and the lifetime in carbon nanotube synthesis

et al. 2015

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We report an inverse relationship between the carbon nanotube (CNT) growth rate and the catalyst lifetime by investigating the dependence of growth kinetics for ∼330 CNT forests on the carbon feedstock, carbon concentration, and growth temperature. We found that the increased growth temperature led to increased CNT growth rate and shortened catalyst lifetime for all carbon feedstocks, following an inverse relationship of a fairly constant maximum height. For the increased carbon concentration, the carbon feedstocks fell into two groups where ethylene/butane showed an increased/decreased growth rate and a decreased/increased lifetime indicating different rate-limiting growth processes. In addition, this inverse relationship held true for different types of CNTs synthesized by various chemical vapor deposition techniques and continuously spanned a 1000-times range in both the growth rate and catalyst lifetime, indicating the generality and fundamental nature of this behavior originating from the growth mechanism of CNTs itself. These results suggest that it would be fundamentally difficult to achieve a fast growth with a long lifetime.

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The relationship between the growth rate and the lifetime in carbon nanotube synthesis

et al. 2015

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“…In addition to the application of plasma, some other experimental setting also achieved enhancement effect on the CVD growth of CNs. For example, with the assistant of hot filament, CNFs were successfully synthesized at low temperatures [146][147][148]. The enhanced CVD growth concerns a lot of extra issues such as the complex plasma environment, the non-uniform heating, etc.…”

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One-Dimensional Carbon Nanostructures: Low-Temperature Chemical Vapor Synthesis and Applications

Yang

Jiang

2016

Carbon Nanoparticles and Nanostructures

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Chemical vapor deposition (CVD) is a powerful method to synthesize various carbon nanostructures (e.g., carbon nanotubes). A conventional CVD process has to be carried out at the temperatures over 600°C. To extend the applications of carbon nanostructures, for example in the semiconductor industry, low-temperature synthesis processes are thus always pursued. In this chapter we review the CVD growth of carbon nanostructures at low temperatures (<450°C). These growth processes are discussed in detail with respect to the applied catalyst system, carbon source, reaction atmosphere, catalyst faces, morphology control as well as unique structural characteristics of grown products. For the low-temperature CVD growth, catalytic reaction occurring on the low index faces of a metal catalyst is a crucial issue, and the growth is rate-limited by surface diffusion. Instead of the classical Vapor-Liquid-Solid (VLS) growth mechanism, the growth mechanism at low temperatures is interpreted with a novel Vapor-Facet-Solid (VFS) mechanism. Due to their unique features, the synthesized carbon nanostructures are promising to be applied for interconnects in large-scale integrated circuits, field emission, microwave adsorption, and as the anode material of lithium ion secondary battery, etc.

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“…[12][13][14] However, only a few studies have been reported for SWCNT growth below 500ºC using Co catalysts, although Co has been widely used in catalysts for SWCNT growth by alcohol catalytic CVD (ACCVD). [15][16][17][18][19][20] In particular, low-temperature growth of SWCNTs using Co catalysts on Al2O3 buffer layers has scarcely been performed, even though Al2O3 buffer layers are recognized to enhance the SWCNT yield in CVD and metal catalysts are frequently supported on Al2O3 buffer layers. 13,14,[21][22][23][24] In general, it is recognized that metal particles that are a few nanometers (typically 1-3 nm) in diameter act as effective catalysts for SWCNT growth.…”

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Single-walled carbon nanotube growth at low temperature by alcohol gas source method using Co catalyst: enhancement effects of Al<sub>2</sub>O<sub>3</sub> buffer layer on carbon nanotube yield

Okada

Saida

Naritsuka

et al. 2019

Trans. Mat. Res. Soc. Japan

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Using an alcohol gas source chemical vapor deposition method, we attempted to grow single-walled carbon nanotube (SWCNT) growth using Co catalysts on Al 2 O 3 buffer layers. Reducing the growth temperature decreased the optimal ethanol pressure to obtain the highest SWCNT yield. By optimizing the ethanol pressure, we succeeded in growing SWCNTs at 400ºC. Irrespective of the growth temperature, SWCNT yields from Co catalysts on Al 2 O 3 buffer layers were higher than those on SiO 2 /Si substrates, but the enhancing effects of Al 2 O 3 buffer layers on SWCNT yield were reduced below 500ºC. Taking into account both in-plane X-ray diffraction results and decrease of catalyst aggregation in the low temperature region, we concluded that the density of Co particles suitable for SWCNT growth increased on SiO 2 surface at low temperature, resulting in the reduction of difference in SWCNT yield at low temperature between Al 2 O 3 buffer layers and SiO 2 /Si substrates.

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Growth of Single-Walled Carbon Nanotubes by Hot-Filament Assisted Chemical Vapor Deposition below 500 °C

Cited by 12 publications

References 11 publications

The relationship between the growth rate and the lifetime in carbon nanotube synthesis

The relationship between the growth rate and the lifetime in carbon nanotube synthesis

One-Dimensional Carbon Nanostructures: Low-Temperature Chemical Vapor Synthesis and Applications

Single-walled carbon nanotube growth at low temperature by alcohol gas source method using Co catalyst: enhancement effects of Al<sub>2</sub>O<sub>3</sub> buffer layer on carbon nanotube yield

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