Growth of single crystal non-polar (112¯0) ZnSnN2 films on sapphire substrate

High electron mobility single-crystalline ZnSnN2on ZnO (0001) substrates

“…3(a) an ABF-STEM image illustrates the overall morphology of the ZnSnN2 layer, with an average thickness ~200 nm. The Selected Area Electron Diffraction (SAED) pattern (inset) verified that the layers are single crystals of hexagonal phase, exhibiting a good heteroepitaxial orientation relationship with the ZnO substrate described by: [11][12][13][14][15][16][17][18][19][20]ZnSnN2// [11][12][13][14][15][16][17][18][19][20]ZnO and [0001]ZnSnN2//[0001]ZnO. The lattice parameters were extracted by measurements on SAED patterns (that were calibrated using the substrate as a calibration standard) and found to be equal to:…”

“…Meanwhile, MBE and sputtered ZnSnN2 films could exhibit multiple crystallographic orientations and are strained due to the contact with hetero-substrates because of the lattice and thermal expansion coefficients mismatch. Reasonably good single crystalline ZnSnN2 films have been reported on cubic yttria-stabilized zirconia (111) [11,14], polar and nonpolar (1-102) sapphire [11], GaN/Al2O3(0001) [6] and on ZnO-buffered sapphire [15]. However, mastering of the synthesis is far from being mature.…”

Approaching Theoretical Band Gap of ZnSnN2 Films via Bias Magnetron Cosputtering at Room Temperature

“…We have checked that the use of soda lime glass substrate does not affect the film structure. Several results in the literature report that magnetron-sputtering method is a suitable approach to obtain crystallized ZnSnN 2 on different substrates at 250 °C, 450 °C, and 300 °C, respectively. ,, The crystal structure of this family of II–IV–N 2 semiconductors is controversial since several structures are proposed: a fully disordered cation sublattice correlates with a wurtzite ZnSnN 2 structure, whereas some authors claim that the orthorhombic structure with a mixture of two orthorhombic phases Pna 2 1 and Pmc 2 1 can lead to disordered materials . In this study, the XRD profile of these samples is consistent with the simulated XRD pattern for the disordered-wurtzite phase (ZnO) P 6 3 mc structure and with the lattice parameters summarized in Table .…”

“…Comparison of experimental band gap energy obtained in the literature (colors) for ZnSnN 2 , using different methods of synthesis at different deposition temperatures (symbols), with the calculated band gap energy and the experimental optical band gap energy of this work ,,,− ,− ,,,,,,− ,,,− …”

“…45 Figure 1. Comparison of experimental band gap energy obtained in the literature (colors) for ZnSnN 2 , using different methods of synthesis at different deposition temperatures (symbols), with the calculated band gap energy and the experimental optical band gap energy of this work 2,4,5,7,9,11,[18][19][20][21][22][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42] So far, few works have investigated oxygen contamination in ZnSnN 2 thin films. A previous experimental work, accomplished in our group, highlighted the content of oxygen at the column boundaries, by EDS measurements in STEM mode and Mössbauer experiments.…”