Growth of SiC platelets using contactless flash technique

Abstract

It is demonstrated that a Contactless Flash Technique (CFT) can be employed to fabricate large SiC platelets. The rapid crystal growth of the platelets is attributed to the high temperatures (estimated µ2300°C) reached by the sample during the 33 s process. The SiC platelets consisted of elongated hexagonal crystals (thickness between 24¯m, length up 50100¯m) with their c-axis corresponding to the slow growth direction. The mechanisms involved in the development of the platelet morphology are discussed in relation to well-established literature on the conventional growth of SiC platelets.

Flash sintering of ceramics

“…Very high heating rates, approaching 20.000°C/min, can be therefore achieved [200]. his technology was successfully applied to B 4 C and SiC/B 4 C composites which were sintered in about 3 s. Moreover, specific microstructures are developed upon contactless flash sintering, among them platelets SiC crystals those growth has been attributed to physical vapor transport mechanisms [201].…”