Growth of SiC by ?Hot-Wall? CVD and HTCVD

Kordina, Olof; Hallin, Christer; Henry, Anne; Bergman, J. P.; Ivanov, Ivan Gueorguiev; Ellison, A.; Són, Nguyên Tiên; Janzén, Erik

doi:10.1002/1521-3951(199707)202:1<321::aid-pssb321>3.0.co;2-h

Cited by 130 publications

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“…The sample could be placed in a different position, and in some cases a gas foil rotation (GFR) is used in order to improve the uniformity. Linköping University is the first to develop horizontal hot wall reactor for the growth of SiC [52][53][54]. It is because this type of reactor has better temperature profile and higher cracking efficiency of the precursors compared to the cold wall type [55,56].…”

Section: Reactor Figure 34 Simplified Drawing Of a Hot-wall Cvd Reacmentioning

confidence: 99%

CVD solutions for new directions in SiC and GaN epitaxy

Li¹

2015

Linköping Studies in Science and Technology. Dissertations

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This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. SiC is a promising wide band gap semiconductor material which could be utilized for fabricating high-power and high-frequency devices. 3C-SiC is the only polytype with a cubic structure and has superior physical properties over other common SiC polytypes, such as high hole/electron mobility and low interface trap density with oxide. Due to lack of commercial native substrates, 3C-SiC is mainly grown on the cheap silicon (Si) substrates. However, there’s a large mismatch in both lattice constants and thermal expansion coefficients leading to a high density of defects in the epitaxial layers. In paper 1, the new CVD solution for growing high quality double-position-boundaries free 3C-SiC using on-axis 4H-SiC substrates is presented. Reproducible growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H2 ratio, N2 addition and pressure, are covered in this study. GaN is another attractive wide band gap semiconductor for power devices and optoelectronic applications. In the GaN-based transistors, carbon is often exploited to dope the buffer layer to be semi-insulating in order to isolate the device active region from the substrate. The conventional way is to use the carbon atoms on the gallium precursor and control the incorporation by tuning the process parameters, e.g. temperature, pressure. However, there’s a risk of obtaining bad morphology and thickness uniformity if the CVD process is not operated in an optimal condition. In addition, carbon source from the graphite insulation and improper coated graphite susceptor may also contribute to the doping in a CVD reactor, which is very difficult to be controlled in a reproducible way. Therefore, in paper 2, intentional carbon doping of (0001) GaN using six hydrocarbon precursors, i.e. methane (CH4), ethylene (C2H4), acetylene (C2H2), propane (C3H8), iso-butane (i-C4H10) and trimethylamine (N(CH3)3), have been explored. In paper 3, propane is chosen for carbon doping when growing the high electron mobility transistor (HEMT) structure on a quarter of 3-inch 4H-SiC wafer. The quality of epitaxial layer and fabricated devices is evaluated. In paper 4, the behaviour of carbon doping using carbon atoms from the gallium precursor, trimethylgallium (Ga(CH3)3), is explained by thermochemical and quantum chemical modelling and compared with the experimental results. GaN is commonly grown on foreign substrates, such as sapphire (Al2O3), Si and SiC, resulting in high stress and high threading dislocation densities. Hence, bulk GaN substrates are preferred for epitaxy. In paper 5, the morphological, structural and luminescence properties of GaN epitaxial layers grown on N-face free-standing GaN substrates are studied since the N-face GaN has advantageous characteristics compared to the Ga...

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Section: Reactor Figure 34 Simplified Drawing Of a Hot-wall Cvd Reacmentioning

confidence: 99%

CVD solutions for new directions in SiC and GaN epitaxy

Li¹

2015

Linköping Studies in Science and Technology. Dissertations

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“…In this work a horizontal gas flow hot-wall MOCVD reactor (GaN VP508GFR, Aixtron AB) that has a growth capacity of 1×4" (alternatively 3×2") wafers per growth run has been used [39]. The hot-wall MOCVD is new concept for III-nitride growth that was originally designed for growth of SiC [40]. In the hot-wall MOCVD system the susceptor is wrapped around the substrate as can be seen in Figure 3.5.…”

Section: Aspects Of the Reactor Designmentioning

confidence: 99%

Doping of high-Al-content AlGaN grown by MOCVD

Nilsson¹

2014

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The high-Al-content Al x Ga 1-x N, x > 0.70, is the principal wide-band-gap alloy system to enable the development of light-emitting diodes operating at the short wavelengths in the deep-ultraviolet, λ < 280 nm. The development of the deep-ultraviolet light-emitting diodes (DUV LEDs) is driven by the social and market impact expected from their implementation in portable units for water/surface disinfection and based on the damaging effect of the deep-ultraviolet radiation on the DNA of various microorganisms. Internationally, intense research and technology developments occur in the past few years, yet, the external quantum efficiency of the DUV LEDs is typically below 1%.One of the main material issues in the development of the DUV LEDs is the achievement of n-and ptype high-Al-content Al x Ga 1-x N layers with low resistivity, which is required for the electrical pumping of the diodes. The doping process becomes significantly more complex with increasing the Al content and the electrical resistivity is as high as 10 1 -10 2 Ω . cm for n-type AlN doped by silicon, and 10 7 -10 8 Ω cm for p-type AlN doped by magnesium.The present study was therefore focused on gaining a better understanding of the constraints in the doping process of the high-Al-content Al x Ga 1-x N alloys, involving mainly silicon. For this purpose, the epitaxial growth of the high-Al-content Al x Ga 1-x N and AlN by implementing the distinct hot-wall MOCVD was developed in order to achieve layers of good structural and morphological properties, and with low content of residual impurities, particularly oxygen and carbon. Substitutional point defects O N and C N may have a profound impact on the doping by their involvement in effects of ntype carrier compensation. The process temperature was varied between 1000 and up to 1400 °C, which is a principal advantage in order to optimize the material properties of the high-Al-content Al x Ga 1-x N and AlN. The epitaxial growth of the high-Al-content Al x Ga 1-x N and AlN was largely performed on 4H-SiC substrates motivated by (i) the lattice mismatch of ~ 1% along the basal plane (the smallest among other available substrates including Si and sapphire), (ii) the good thermal conductivity of 3.7 W cm -1 K -1 , which is essential to minimize the self-heating during the operation of any light-emitting diode, and (iii) the limited access to true-bulk AlN wafers. The outcome of this study is accordingly summarized and presents our understanding for (i) the complex impact of silicon and oxygen on the n-type conductivity of Al 0.77 Ga 0.23 N, representative for the alloy composition at which a drastic reduction of the n-type conductivity of Al x Ga 1-x N is commonly reported (paper 1); (ii) the strain and morphology compliance during the intentional iv doping by silicon and magnesium, and its correlation with the resistivity of highly doped layers of Al 0.82 Ga 0.18 N alloy composition (paper2); (iii) the n-type conductivity of highly Si-doped Al 0.72 Ga 0.28 N as bound by the process temperature (p...

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“…Today, all SiC device structures require an epitaxial layer to be grown on top of the wafer. The state-of-the-art epilayers are preferably grown by Hot-Wall Chemical Vapor Deposition (HWCVD) using silane (SiH 4 ) and a light hydrocarbon, such as propane (C 3 H 8 ) or ethylene (C 2 H 4 ), as precursors heavily diluted in hydrogen [1]. Typical growth rates are about 5 -10 µm/h which give long growth times for the thick epitaxial layers that are required for high voltage devices.…”

Section: Introductionmentioning

confidence: 99%

SiC epitaxy growth using chloride-based CVD

Henry

Beyer

Pedersen

et al. 2012

Physica B: Condensed Matter

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The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 µm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two different chemistry approaches are compared: addition of hydrogen chloride to the standard precursors or using methyltrichlorosilane, a molecule that contains silicon, carbon and chlorine. Optical and electrical techniques are used to characterize the layers.

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Growth of SiC by ?Hot-Wall? CVD and HTCVD

Cited by 130 publications

References 0 publications

CVD solutions for new directions in SiC and GaN epitaxy

CVD solutions for new directions in SiC and GaN epitaxy

Doping of high-Al-content AlGaN grown by MOCVD

SiC epitaxy growth using chloride-based CVD

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