Growth of Semiconductor Single Crystals from Vapor Phase

Dhanasekaran, R.

doi:10.1007/978-3-540-74761-1_27

Cited by 4 publications

(10 citation statements)

References 143 publications

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“…Carbon electrodes were prepared by depositing colloidal graphite paint, and Au contacts were deposited by e-beam evaporation. The γ-ray sources employed were a noncollimated 0.2 mCi 57 Co 122 keV and 241 Am 59.5 keV γ-ray source.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

“…19,52−56 In general, the temperature for vapor transport takes place at lower temperature than the melting point, thus reducing possible contamination from the crucible. The solid−vapor interfaces exhibit higher interfacial morphological stability during growth than do solid−liquid interfaces, 57 which suppresses the formation of secondary phases during growth and leads to better quality of the crystals. Here, we reproducibly grew large single crystals of Hg 3 Q 2 I 2 through vapor transport (Figure 4).…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

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Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Kontsevoi

Stoumpos

et al. 2017

J. Am. Chem. Soc.

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The high Z chalcohalides HgQI (Q = S, Se, and Te) can be regarded as of antiperovskite structure with ordered vacancies and are demonstrated to be very promising candidates for X- and γ-ray semiconductor detectors. Depending on Q, the ordering of the Hg vacancies in these defect antiperovskites varies and yields a rich family of distinct crystal structures ranging from zero-dimensional to three-dimensional, with a dramatic effect on the properties of each compound. All three HgQI compounds show very suitable optical, electrical, and good mechanical properties required for radiation detection at room temperature. These compounds possess a high density (>7 g/cm) and wide bandgaps (>1.9 eV), showing great stopping power for hard radiation and high intrinsic electrical resistivity, over 10 Ω cm. Large single crystals are grown using the vapor transport method, and each material shows excellent photo sensitivity under energetic photons. Detectors made from thin HgQI crystals show reasonable response under a series of radiation sources, including Am andCo radiation. The dimensionality of Hg-Q motifs (in terms of ordering patterns of Hg vacancies) has a strong influence on the conduction band structure, which gives the quasi one-dimensional HgSeI a more prominently dispersive conduction band structure and leads to a low electron effective mass (0.20 m). For HgSeI detectors, spectroscopic resolution is achieved for both Am α particles (5.49 MeV) andAm γ-rays (59.5 keV), with full widths at half-maximum (FWHM, in percentage) of 19% and 50%, respectively. The carrier mobility-lifetime μτ product for HgQI detectors is achieved as 10-10 cm/V. The electron mobility for HgSeI is estimated as 104 ± 12 cm/(V·s). On the basis of these results, HgSeI is the most promising for room-temperature radiation detection.

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Section: ■ Experimental Sectionmentioning

confidence: 99%

Section: ■ Experimental Sectionmentioning

confidence: 99%

Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Kontsevoi

Stoumpos

et al. 2017

J. Am. Chem. Soc.

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“…II C 1, to produce a QW, one simply needs to deposit a Si layer preceded and followed by an SiO 2 layer. [155][156][157] PECVD is characterized by a high deposition rate (3 nm/min), and this can lead to inconsistent layer thicknesses. 315 It is also important to note that this method produces unreproducible structures.…”

Section: Plasma Enhanced Chemical Vapour Depositionmentioning

confidence: 99%

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Barbagiovanni

Lockwood

Simpson

et al. 2014

Applied Physics Reviews

194

132

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The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO 2 , and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si 3 N 4 and Al 2 O 3. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters. V

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“…Vapor-phase growth is the third method of growing single crystals, although it is more commonly applied to the fabrication of thin single crystals films on substrates than bulk single crystals. The growth of single crystals through the vapor phase can be accomplished via a sublimation process, reaction in the gas phase and transport reaction, such in the case of chemical vapor transport (CVT) and, physical vapor transport (PVT) [16]. Compared to the melt-growth method, the vaporgrowth method utilizes lower processing temperatures which result in a significantly higher quality crystal due to avoidance of incorporating impurities, structural and compositional uniformities, and phase transitions.…”

Section: Conventional Techniques Of Single Crystal Growthmentioning

confidence: 99%

Current status of solid-state single crystal growth

Milisavljevic

2020

BMC Mat

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Fabrication of single crystals has long been limited to melt-and solution-growth techniques. However, in recent years solid-state single crystal growth (SSCG) has appeared as a promising alternative to the conventional techniques due to its cost-effectiveness and simplicity in terms of processing. Moreover, the SSCG technique has enabled the fabrication of single crystals with complex chemical compositions and even incongruent melting behavior. A recently proposed mechanism of grain boundary migration known as the "mixed control mechanism" and the associated principles of microstructural evolution represent the basis of the SSCG technique. The mixed control mechanism has been successfully used to control the key aspects of the SSCG technique, which are the grain growth and the development of the microstructure during the conversion process of the single crystal from the polycrystalline matrix. This paper explains in brief basis of the mixed control mechanism and the underlying principles of microstructural evolution in polycrystalline materials and provides a comprehensive overview of the most recent research on single crystal materials fabricated via the solid-state single crystal growth technique and their properties.

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Growth of Semiconductor Single Crystals from Vapor Phase

Cited by 4 publications

References 143 publications

Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Current status of solid-state single crystal growth

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Growth of Semiconductor Single Crystals from Vapor Phase

Cited by 4 publications

References 143 publications

Defect Antiperovskite Compounds Hg3Q2I2 (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Defect Antiperovskite Compounds Hg3Q2I2 (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Current status of solid-state single crystal growth

Contact Info

Product

Resources

About

Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection