Growth of semiconductor nanowires by molecular beam epitaxy

Colli, A.; Martelli, F.; Rubini, S.

doi:10.1016/b978-0-12-387839-7.00003-8

Cited by 3 publications

(3 citation statements)

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“…In this method, the thin film can grow epitaxially under the ultrahigh vacuum (for example, at 10 À8 Pa (Pascals)) and ultraslow deposition rate (<1000 nm/h) [145]. It is critical to control the MBE technique in order to grow epitaxial film, where their composition can be regulated to the monolayer level [147]. In a solid source MBE, ultrapure elements (gallium, Ga and arsenic, As) are heated in separate quasi-Knudsen effusion cells.…”

Section: Molecular Beam Epitaxymentioning

confidence: 99%

Overviews of Synthesis of Nanomaterials

Bashir

Liu

2015

Advanced Nanomaterials and Their Applications in Renewable Energy

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Section: Molecular Beam Epitaxymentioning

confidence: 99%

Overviews of Synthesis of Nanomaterials

Bashir

Liu

2015

Advanced Nanomaterials and Their Applications in Renewable Energy

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“…This results in a dramatic decrease of the size of the produced devices and significant simplification of the fabrication process. Silicon NWs can be produced via the VLS technique by chemical vapor deposition, , electron-beam evaporation, molecular beam epitaxy, magnetron sputtering, and pulsed laser deposition , (PLD). Among these technologies, PLD is the most flexible one in terms of plasma energy range (10–100 eV) and growth speeds.…”

Section: Introductionmentioning

confidence: 99%

Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications

et al. 2018

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We report here the growth and functional properties of silicon-based nanowhisker (NW) diodes produced by the vapor–liquid–solid process using a pulsed laser deposition technique. For the first time, we demonstrate that this method could be employed to control the size and shape of silicon NWs by using a two-component catalyst material (Au/Cu ≈ 60:1). During the NW growth, copper is distributed on the outer surface of the NW, whereas gold sticks as a droplet to its top. The length of NWs is defined by the total amount of copper in the catalyst alloy droplet. The measurements of the electrical transport properties revealed that in contact with the substrate, individual NWs demonstrate typical I – V diode characteristics. Our approach can become an important new tool in the design of novel electronic components.

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“…The ultra-high vacuum and precise controlling allowed by MBE is beneficial in testing the growth model proposed. 113 In MBE system, the atoms for growing nanowires are directly provided by molecular beams, rather than decomposing metal-organic substances. Molecular beam epitaxy (MBE) is carried out in UHV chamber and the slow growth can guarantee the growth of high-quality materials.…”

Section: Mbementioning

confidence: 99%

Understanding of InAs nanostructure growth by molecular beam epitaxy

Sun¹

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In the last decades, low-dimensional III-V nanostructures, such as nanowires and nanosheets, have drawn tremendous research interests, due to their superior electronic and optoelectronic properties, which have a lot of potential applications in nanoelectronics and optoelectronics. As an important category among III-V materials, InAs, having properties such as narrow band gap and high electron mobility, is one of the building blocks for future nanodevices. Generally speaking, most nanostructures catalyzed by metallic catalysts were found to be one-dimensional nanowires along the V 3. [3]

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Growth of semiconductor nanowires by molecular beam epitaxy

Cited by 3 publications

References 261 publications

Overviews of Synthesis of Nanomaterials

Overviews of Synthesis of Nanomaterials

Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications

Understanding of InAs nanostructure growth by molecular beam epitaxy

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