Growth of semi-polar InN layer on GaAs (1 1 0) surface by MOVPE

Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition

“…These values are smaller than those of the 0.3‐µm‐thick InN layer [Figure (b)]. It should be noted that the FWHM values of XRCs of the thick, semipolar InN films on YSZ are small compared to those of InN films grown on other substrates (sapphire and GaAs). These results indicate that the high‐growth‐rate PSD method is effective for improving the crystallinity of semipolar InN.…”

“…Furthermore, we clarified that arbitrary semipolar plane InN grows epitaxially by changing the plane index of YSZ . Semipolar InN substrates might be useful in suppressing quantum‐confined Stark effects in InGaN quantum wells, which have potential applications in high‐efficiency solar cells and light‐emitting devices. The YSZ substrate also makes it possible to grow both In and N‐polar ( c ‐plane) InN films .…”

Semi‐polar InN(10$ \bar 1 $3) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas

“…However, there are few reports on semi-polar InN growth. In previous work, we investigated semi-polar InN growth on a GaAs(110) substrate and confirmed that a relatively high temperature (over 575 ºC) is needed to grow semi-polar InN [13]. In this study, the effect of hydrogen mixed in nitrogen carrier gas was investigated.…”

“…Basic experimental processes such as chemical etching and thermal cleaning were conducted in the same way as in Ref. [13]. Input partial pressures of trimethylindium (TMIn) and NH 3 were 4.0×10 -5 and 0.4 atm, respectively.…”