Growth of Semi-Insulating GaN by Using Two-Step AlN Buffer Layer

Zhong-Tang, Zhou; Guo, Liang; Zhang, Xing; Ding, Gui-Jun; Zhang, Jie; Peng, Mingzeng; Jia, Haiqiang; Chen, Hong; Zhou, Jian

doi:10.1088/0256-307x/24/6/058

Cited by 5 publications

(5 citation statements)

References 29 publications

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“…The FWHMs of x-scans increase with the increment of v, while the FWHM of U scan decrease with the increment of v angle. Moreover, they become closer when the (12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31) reflection yields at 78.6°in v as shown in Fig. 7.…”

Section: Resultsmentioning

confidence: 88%

“…Generally, lattice constants c of the layer perpendicular to the interface are calculated from the one or two high-angle symmetric (000l) reflections such as (0004), (0006), and (0008) plane measurements. On the other hand, the lattice constants a parallel to the film interface can be derived using the one or two diffraction peaks of the highangle asymmetrical reflections, such as (10)(11)(12)(13)(14), (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24), (10)(11)(12)(13)(14)(15), and (20-24) [17][18][19]. In this study, the c and a values calculated from the (0004), (0006) symmetric plane reflections, and (10-12), (10-13), (10)(11)(12)(13)(14), and (20-21) asymmetric plane reflections measurements, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The FWHMs values of the x and U-scans of the (10-15), (10)(11)(12)(13)(14), (10)(11)(12)(13), (10)(11)(12), (20)(21)(22)(23), (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22), (20)(21), (12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31) plane reflections with respect to inclination angle (v) for measured in sample D are given in Fig. 7.…”

Section: Resultsmentioning

confidence: 99%

“…Another important point for the growth of the HR-GaN layer is the buffer structures. In the MOCVD growth, the buffer layers used between the 6H-SiC substrate and the GaN layer strongly effect the crystal quality and electrical properties of the GaN layer [14][15][16]. Chen et al [6] showed that the AlGaN layer between the AlN buffer and the GaN layer decreases the Si atoms density in the structures and hence changed the resistivity of the GaN layer.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD

Arslan

Öztürk

Tiraş

et al. 2016

J Mater Sci: Mater Electron

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High-resistive GaN ([10 8 X cm) layers have been grown with different buffer structures on 6H-SiC substrate using metalorganic chemical vapor deposition reactor. Different combination of the GaN/AlN super lattice, low temperature AlN, high temperature AlN and Al x Ga 1-x N (x & 0.67) layers were used in the buffer structures. The growth parameters of the buffer layers were optimized for obtaining a high-resistive GaN epilayer. The mosaic structure parameters, such as lateral and vertical coherence lengths, tilt and twist angle (and heterogeneous strain), and dislocation densities (edge and screw dislocations) of the high-resistive GaN epilayers have been investigated using x-ray diffraction measurements. In addition, the residual stress behaviors in the high-resistive GaN epilayers were determined using both x-ray diffraction and Raman measurements. It was found that the buffer structures between the HR-GaN and SiC substrate have been found to have significant effect on the surface morphology and the mosaic structures parameters. On the other hand, both XRD and Raman results confirmed that there is low residual stress in the high-resistive GaN epilayers grown on different buffer structures.

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Section: Resultsmentioning

confidence: 88%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD

Arslan

Öztürk

Tiraş

et al. 2016

J Mater Sci: Mater Electron

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“…TDs have significant effects on the performance and lifetime of GaN-based devices [3,4]. Since these devices have recently become available for commercial use, many groups have studied the homoepitaxial growth to enhance the reliability of optoelectronic devices by minimizing the defects or dislocation density of GaN epilayers [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction

Öztürk

Sarıkavak

et al. 2009

J Mater Sci: Mater Electron

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The important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are determined by using nondestructive high-resolution X-ray diffraction in detail. The distorted GaN layers were described as mosaic crystals characterized by vertical and lateral coherence lengths, a mean tilt, twist, screw and edge type threading dislocation densities. The rocking curves of symmetric (00.l) reflections were used to determine the tilt angle, while the twist angle was an extrapolated grown ω-scan for an asymmetric (hk.l) Bragg reflection with an h or k nonzero. Moreover, it is an important result that the mosaic structure was analyzed from a different (10.l) crystal direction that was the angular inclined plane to the z-axis. The mosaic structure parameters were obtained in an approximately defined ratio depending on the inclination or polar angle of the sample. © 2009 Springer Science+Business Media, LLC

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Interfacial engineering for semi-insulating GaN/sapphire template with low dislocation density

Zhang

Wang

et al. 2022

Journal of Alloys and Compounds

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Growth of Semi-Insulating GaN by Using Two-Step AlN Buffer Layer

Cited by 5 publications

References 29 publications

Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD

Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD

Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction

Interfacial engineering for semi-insulating GaN/sapphire template with low dislocation density

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