Growth of scandium doped GaN by MOVPE

Saidi, C.; Chaaben, N.; Bchetnia, A.; Fouzri, A.; Sakly, Nawfel; Jani, B. El

doi:10.1016/j.spmi.2013.05.010

Cited by 21 publications

(12 citation statements)

References 40 publications

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“…High resolution X-ray diffraction (HRXRD) results showed a slight broadening of rocking curves around symmetric (0 0 2) reflexions for Sc-doped GaN layers with increasing Cp 3 Sc flow rate. Room temperature photoluminescence (PL) showed a quenching of ultraviolet near band edge emission (UV) by increasing Sc doping level [147]. Wide band gap diluted magnetic semiconductors have recently been of interest due to theoretical predictions of room temperature ferromagnetism in these materials.…”

Section: Organolanthanides In Materials Sciencementioning

confidence: 99%

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2013

Edelmann

2015

Coordination Chemistry Reviews

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Section: Organolanthanides In Materials Sciencementioning

confidence: 99%

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2013

Edelmann

2015

Coordination Chemistry Reviews

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“…Complexes of transition metals like Sc (group 3 or IIIB) have a lower vapor pressure than complexes from metals of group 13‐ or IIIA‐nitrides, like Al and Ga. The growth of Sc‐containing nitrides by MOCVD was not successful and Sc was incorporated on doping levels only, [ 14,15 ] until we developed a proprietary heating and gas mixing system tailored to the usage of precursors with low vapor pressure such as commercially available

{Cp}_{3} Sc

. [ 16 ] We examined the effect of the growth parameters temperature, growth mode, V/III ratio, and pressure on the growth of AlScN with

{Cp}_{3} Sc

.…”

Section: Introductionmentioning

confidence: 99%

Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition

Streicher

Kirste

Manz

et al. 2022

Physica Rapid Research Ltrs

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Growth of AlScN high‐electron‐mobility transistor (HEMT) structures by metal–organic chemical vapor deposition (MOCVD) is challenging due to the low vapor pressure of the conventionally used precursor tris‐cyclopentadienyl‐scandium (Cp3Sc). It is shown that the electrical and structural characteristics of the AlScN/GaN heterostructure improve significantly by using bis‐methylcyclopentadienyl‐scandiumchloride ((MCp)2ScCl), which has a higher vapor pressure and allows for an increased molar flow and thus higher growth rate (GR). AlScN/GaN HEMT heterostructures with superior electrical characteristics deposited at different barrier growth temperatures are presented. The sheet resistance of 172 Ω sq−1 obtained at 900 °C barrier growth temperature is among the lowest reported so far for AlScN/GaN HEMT structures. The sheet charge carrier density is and the electron mobility μ is 1124 cm2 Vs−1.

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“…The following are examples of technologies: solar cells [7], pH sensors [8], light-emitting diode (LED) [9], shorter wavelength optical devices [10], high-power transistor devices [11], and beta-voltaic devices [12]. Several successful trials have attempted to synthesize GaN nanostructures using various growing techniques, including organic chemical vapor deposition of the metal [13], Reactive Epitaxial of Molecular Beam [14], Thermal Ammonia [15], Physical Vapor Deposition [16], Chemical Vapor Deposition (CVD) [17], Sol-gel Chemistry [18], Electrochemical Deposits [19], Thermal Vapor Deposition, combustion method [20], Pulsed Laser Deposition [21] and Pulsed Laser Ablation in Liquid (PLAL) [22].…”

Section: Introductionmentioning

confidence: 99%

Synthesized of GaN Nanostructure Using 1064 nm Laser Wavelength by Pulsed Laser Ablation in Liquid

Amir¹,

Fakhri²,

Alwahib³

2022

ETJ

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High-quality GaN nanofilm was prepared by pulsed laser ablation in ethanol.  A new, thin, layer-by-layer preparation factor of GaN nanofilm was used.  The structural properties showed a high and sharp peaks of the hexagonal GaN nanostructure and identical to the conventional structure of the GaN crystal.  The optical properties showed an increase in the reflectivity of the gallium nanoparticles in the UV recovery.  The increase in the optical bandgap energy showed a blueshift related to the size of the GaN nanoparticles grown on a porous silicon substrate.GaN nanostructure was Synthesized using Pulsed laser ablation in liquid ethanol with Nd:YAG laser at pulsed laser ablation energy of 1600 mj and laser wavelength of 1064 nm. The nanoparticle was deposited using the drop cast method on the prepared porous silicon substrate. The structural and optical properties of the prepared GaN were studied. XRD pattern shows a high and sharp peak of pSi peak at 2θ =28.74 reflected from (111) plane and exhibits h-GaN rise at 2θ =34.54, 2θ =37.49, 2θ= 48.19 and 2θ=57.99 which are reflected from ( 002), ( 100), ( 102), ( 110) planes respectively where (002) plane has the highest peak than others. AFM and FESM proved an increase in the grain size of GaN. The reflectance of GaN (81.79%) at the wavelength (306nm) and has an energy band gap of (3.9eV).

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Growth of scandium doped GaN by MOVPE

Cited by 21 publications

References 40 publications

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2013

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2013

Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition

Synthesized of GaN Nanostructure Using 1064 nm Laser Wavelength by Pulsed Laser Ablation in Liquid

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