Growth of Sb Bi1− gradient single crystals by the Czochralski method with Bi feed

Growth of an oriented Bi40−xInxTe60 (x = 3, 7) thermoelectric material by seeding zone melting for the enhancement of chemical homogeneity

“…Bi 2 Te 3 -In 2 Te 3 , when prepared by Czochralski, Bridgman and zone melting methods, a pronounced composition gradient must form in the initial transient region before the steady state is established and solidification occurs with constant composition. [5][6][7][8][9][10][11] The final transient is associated with the solute pile-up in front of the growing interface that eventually will solidify with a higher concentration. The length L i of the initial transient region can be calculated according to 28…”

“…Possible methods for producing Bi 2 Te 3 -based materials include different varieties of directional solidification and powder sintering using milling, hot pressing and so on. [5][6][7][8][9][10][11] Such chemical inhomogeneity introduces a variation of the site occupancy in the grown crystal that entails locally less favorable thermoelectric properties or even transformation of the conductivity type from positive to negative along the growth direction of a bulk ingot, 10 which would lead to loss of the desired thermoelectric properties. zone melting, and Bridgman and Czochralski growth methods, can produce a thermoelectric material exhibiting better thermoelectric properties than its counterparts prepared by the other methods.…”

“…4 However, owing to convection instabilities in the melt and to the related inhomogeneous solute redistribution processes during crystal growth, chemical homogeneity in the Bi 2 Te 3 -based oriented material is not easy to accomplish. [5][6][7][8][9][10][11] Such chemical inhomogeneity introduces a variation of the site occupancy in the grown crystal that entails locally less favorable thermoelectric properties or even transformation of the conductivity type from positive to negative along the growth direction of a bulk ingot, 10 which would lead to loss of the desired thermoelectric properties.…”

AlxGa1–xSb Crystals Grown by a Modified Stepanov Technique with an Ultrasonic Effect

“…We used these models for the calculation of the effective segregation coefficients of Sb, Bi, In, and Ga in Bi−Sb and In−Ga−Sb systems. 19,20,29 In our cases, the component concentrations in Bi According to the OM model, 26 the effective distribution coefficient k eff in Czochralski growth is…”

“…The calculation models were further improved by Wilson, , Garandet et al, Ostrogorsky and Müller. − These models applied to dopants with concentrations less than 1 atom %. We used these models for the calculation of the effective segregation coefficients of Sb, Bi, In, and Ga in Bi–Sb and In–Ga–Sb systems. ,, In our cases, the component concentrations in Bi x Sb 1– x and In x Ga 1– x Sb solid solutions were larger than 1 atom %. Experimental measurements of the component distribution in grown single crystals by an electron probe microanalysis (EPMA) demonstrated a better agreement with the Ostrogorsky–Müller (OM) model.…”