Growth of quantum dots on pit-patterns

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

“…For smaller pits, with size comparable to the most unstable wavelength λ s ≈ λ max , the perturbation is found to grow in anti-phase with the substrate profile, except for the case of very thin films, where islands localize at the substrate tops [227][228][229][230]. Similar results have been obtained for more isolated gaussian pits [231] and are consistent with simulations obtained by FEM, also including surface and elastic anisotropies, for both pits and hump geometries [75,232].…”

Capillary-driven elastic attraction between quantum dots

“…We therefore argue that the dot clustering found in experiments may fully be rationalized by the surface-stress induced lowering of the nucleation barrier. Extra effects such as alloying, defects 66 , anisotropy 67 , patterning 68,69 etc, that could also alter the absolute value of the nucleation barrier, will be investigated in future work.…”

Synthesis and Characterization of Nano-to Meso Scale Ordered Structures in the Si1-xGex Alloy System

“…This phenomenon of morphological instability is commonly observed for Si1-xGex system at low misfit strain (x≤0.6). [36][37][38][39][40][41] For system with larger misfit strain or higher Ge composition, growth instability develops (1) prepyramid island and (b) truncated {105} faceted pyramid prior to the formation of a complete {105} faceted quasi-pyramidal 3D islands. 37 much faster, resulting in a conventional 3D island nucleation and growth.…”

“…This is different from the buffer morphology used here, where a quasi-sinusoidal surface is obtained, without grooving. 39,120 is an explicit function of the first two variables, although in their model aspect ratio is also varied. 120,137 In the current work, the film thickness is kept constant while we instead vary the pit opening width.…”

“…When the artificially imposed pattern periodicity (λp) becomes comparable to the λATGS, the interaction between these two wavelengths becomes important to QD site selection. 39 So far the interaction between λATGS and λp, has not been systematically explored. Here we present results of a detailed experimental study on QD site selection for Si0.5Ge0.5 alloys.…”