Growth of preferentially c-axis oriented hydroxyapatite thin films on Si(1 0 0) substrate by electron-cyclotron-resonance plasma sputtering

Low-temperature crystallization and high-temperature instability of hydroxyapatite thin films deposited on Ru, Ti, and Pt metal substrates

“…It is seen that solid-phase crystallization occurred at 550°C after 10 h of annealing. This threshold crystallization temperature coincides with the crystallization limit of HAp films deposited on Si [40,41] and sapphire [42]. In contrast, 2 h of annealing was sufficient to drive crystallization at 600°C.…”

“…The details on the ECR plasma sputtering apparatus and the optimum deposition conditions have been described in our previous papers [40,41]. Briefly, ECR plasma was generated by transmitting 2.45 GHz microwaves into the plasma source region.…”

“…We have recently been applying electron cyclotron resonance (ECR) plasma sputtering to coat various kinds of substrates with HAp films [40][41][42]. ECR sputtering is categorized as an off-axis sputtering technique, which is represented by the opposing target sputtering [43], thus inflicting less damage on deposited films.…”

Calcium orthophosphate deposits: Preparation, properties and biomedical applications

“…The water pressure range was between 10 -4 and 10 -1 Pa. A deposition rate was ~ 1.3 nm/min. Crack-free ACP deposits of 300 -500 nm thick with smooth morphologies were manufactured at room temperature, which were transformed into HA deposits after annealing in presence of oxygen [266]. However, crack-free HA deposits of high hardness and the specific crystallographic orientations were manufactured when Xe gas was used and Si (100) substrates were heated to 450 -500 °C from their rear [267].…”

“…A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT 18 To sputter materials, several types of the techniques are used, such as: ion beam [216][217][218][219][220][221][222][223][224][225][226], radio-frequency (RF) magnetron [227-244k], pulsed laser [58,75,232,, electroncyclotron-resonance plasma [266][267][268], diode, direct current and reactive sputtering or deposition [269,270]. However, since CaPO 4 belong to the electrically insulating materials, the last three techniques cannot be used for their spattering.…”