Growth of PbS and CdS thin films by low-pressure chemical vapour deposition using dithiocarbamates

Файнер, Н. И.; Косинова, М. Л.; Rumyantsev, Yu. M.; Salman, E. G.; Kuznetsov, F. A.

doi:10.1016/0040-6090(95)08188-7

Cited by 84 publications

(36 citation statements)

References 7 publications

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“…The growth rate of PbS films grown by the chemical vapour deposition in the temperature range 698 to 733 K depends on the type of substrate material and increases with increasing temperature. The black films formed that way are polycrystalline PbS with cubic structure [3]. The measurements of Seebeck effect at room temperature show that the conduction is p-type for PbS films deposited on glass.…”

Section: Introductionmentioning

confidence: 98%

“…Various techniques are available for the deposition of polycrystalline films of semiconducting materials. The growth from the solution is least demanding and with its simplicity makes it very attractive [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…Carrier densities derived from measurements of the Hall effect are equal to those derived from the thermoelectric-power measurements. Therefore, they are interpreted to be equal to the carrier density in the grains of the PbS layer [3].…”

Section: Introductionmentioning

confidence: 99%

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Growth and characterization of lead sulfide films deposited on glass substrates

Salim

Hamid

2001

Renewable Energy

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Lead-sulfide (PbS) films have been deposited by chemical deposition method on glass substrates. The details of the preparation method are described. The advantage of this method is simple, relatively inexpensive and easily controlled method that is producing large-area films. Some data about the electrical properties, structure, composition of the films and thermal stability of the powder samples are also presented. The structure and crystallite sizes were determined by X-ray diffraction studies. The films are very adherent to the substrates. The films are polycrystalline and average crystallite sizes are 15 nm. The surface morphology of the as-deposited and heated films was studied with a scanning electron microscope. The rate of deposition and terminal thickness have been determined. Hall measurements were performed at room temperature for films deposited on glass substrate to determine the carrier density, Hall mobility and the mean free path of the carriers.PACS numbers: 73.61.Jc UDC 538.975

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Growth and characterization of lead sulfide films deposited on glass substrates

Salim

Hamid

2001

Renewable Energy

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“…Species such as thiolates, dithiocarbamates (dtc) [7][8][9][10][11], dithiophosphinates [12], xanthates [13][14][15], and other compounds [16] have been successfully used to obtain respective sulfides. So far, dithiocarbamates remain most widely used for this purpose with dtc being undoubtedly the one of the most explored S,S 0 -chelate systems.…”

Section: Introductionmentioning

confidence: 99%

Cadmium complex possessing simultaneously silanethiolato- and dithiocarbamato-ligands. A novel single-source precursor of cadmium sulfide

Mietlarek-Kropidłowska

Chojnacki

Strankowski

et al. 2014

J Therm Anal Calorim

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Thermal decomposition of suitable coordination compounds may be used as efficient route for fabrication of semiconducting layers. A new potential CdS precursor-a cadmium complex with all-sulfur Cd-coordination sphere [Cd{l-SSi(OBu t ) 3 }(S 2 CNC 4 H 8 )] 2 1-has been prepared, and its properties are investigated. The complex was obtained in the reaction between dimeric bis(tri-tert-butoxysilanethiolato)cadmium(II) [Cd{SSi(OBu t ) 3 } 2 ] 2 and ammonium N,Ntetrametylene-dithiocarbamate and characterized by spectral methods (IR, UV-Vis, MS, and NMR). X-ray structure analysis revealed the complex as molecular and dimeric in solid state with each of chelating dithiocarbamate ligands bonded to one Cd center and sulfur atoms from two tri-tertbutoxysilanethiolato ligands bridging metallic centers and thus completing the CdS 4 coordination sphere. Thin film of the precursor prepared on SiO 2 substrates via spin-coating technique was analyzed by AFM. Its decomposition was studied by thermal analysis methods (TG, DSC, and TG-FTIR). After melting at 227°C, [Cd{l-SSi(OBu t ) 3 } (S 2 CNC 4 H 8 )] 2 undergoes endothermic decomposition leading to CdS as the only solid product further identified by XRD, EDS, FIR as hexagonal CdS form. Its morphology is characteristic and may be described as ''micro-noodles''.

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“…Many methods have been developed to synthesise PbS thin films, including vacuum deposition [12], electrochemical deposition [13], chemical bath deposition (CBD) [14,15], pulsed laser deposition [16], sonochemical [17], spray pyrolysis [18] and successive ionic layer adsorption and reaction method [19]. PbS nanowires and nanorods dispersed in mesoporous silica [20] and polymer films [21] have been prepared through templates and surfactants.…”

Section: Introductionmentioning

confidence: 99%