Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy

Realization of non-polar ZnO (1 1 2̄ 0) homoepitaxial films with atomically smooth surface by molecular beam epitaxy

“…Stripes along c-axis are observed on both surfaces of samples A and B grown at 600 1C, which have been reported as a typical pattern on A-plane (1 1 2 0) ZnO [12][13][14][15]. Fig.…”

“…Therefore growth of non-polar ZnO, A-plane mostly, has been drawing an increasing attention in order to eliminate the influence of the internal electrostatic field on internal quantum efficiency of the LED devices. Significant efforts have been devoted to both heteroepitaxy [12] and homoepitaxy [13,14] of non-polar ZnO on different substrates recently, most of the films exhibit rough surfaces with typical striped structures and it is impossible to apply them to quantum well structures. For these applications, it is essential to improve the surface morphology and make it meet device requirements.…”

Structural and optical properties of non-polar A-plane ZnO films grown on R-plane sapphire substrates by plasma-assisted molecular-beam epitaxy

“…There are several reports on growing non-polar A-plane ZnO on R-plane sapphire substrates. Most of the studies report the A-plane ZnO films grown by MOCVD [6][7][8][9] and only a few studies report molecular-beam epitaxy (MBE) of A-plane ZnO [10,11]. We note that there have been no detail studies on growth and properties of A-plane ZnO grown by MBE on R-plane sapphire so far.…”

Growth and characterization of Mg Zn1−O films grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

“…In fact, many studies have reported that Mg is favorable for growth of ternary compounds with ZnO due to the similarity of ionic radius between Zn (0.60 Å) and Mg (0.57 Å) [13][14][15]. However, only a few studies on growth and properties of nonpolar Mg x Zn 1Àx O film have been performed [16][17][18][19][20].…”